Allicdata Part #: | FJV3106RMTF-ND |
Manufacturer Part#: |
FJV3106RMTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 200MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJV3106RMTF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Description
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The FJV3106RMTF is a single, pre-biased transistor from the category of bipolar junction transistors, also known as BJTs. This type of transistor is composed of two PN junctions, thus forming three terminals: the base, collector and emitter. The transistor works as an electronic switch, allowing current to flow between the collector and the emitter, when a current is applied to the base. This property makes this type of transistor an ideal choice for applications in which one needs to precisely control current flow, such as amplifiers, switches and data processing circuits.
The FJV3106RMTF is a unique BJT due to its pre-biased design. It is equipped with a built-in constant-current source and emitter-base leakage current is compensated, therefore it can be used in higher voltage applications. Additionally, this transistor can have a power rating of up to 2 watts, which makes it particularly suitable for applications requiring high levels of power. This type of transistor is excellent for powering electric motors, provided that it is being used in the right circuit configurations.
The pre-biased design of the FJV3106RMTF makes it ideal for applications in which a wide variety of current curves is required. A pre-biased transistor can be used to obtain higher gains at lower base currents, which is desirable in many applications such as audio amplifiers, radio receivers and other audio-related applications. This type of transistor is also well suited for signal conditioning applications in which very low input bias current is desired. Furthermore, this transistor can be used as a sensor element due to its excellent linearity and accuracy.
The working principle of the FJV3106RMTF is based on the emitter-base region of the transistor. When current is applied to the base, a voltage is developed across the emitter-base junction which allows the current to be amplified between the collector and the emitter. The amount of current that will be amplified is dependent on the base current, making this type of transistor a great choice for applications in which precise control of current is needed. Additionally, due to its built-in current source, the FvJ3106RMTF operates with exceptional consistency and stability.
In conclusion, the FJV3106RMTF is a pre-biased bipolar junction transistor that is ideal for use in applications requiring precise control of current flow. Its simple construction, combined with its pre-biased design, make it an excellent choice for data processing circuits, audio amplifiers and other applications in which power requirements are relatively high. Furthermore, its built-in current source and its high linearity and accuracy make it a great choice for signal conditioning applications.
The specific data is subject to PDF, and the above content is for reference
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