FJV3113RMTF Discrete Semiconductor Products

Resistor - Emitter Base (R2):	47 kOhms
Base Part Number:	FJV3113
Supplier Device Package:	SOT-23-3 (TO-236)
Package / Case:	TO-236-3, SC-59, SOT-23-3
Mounting Type:	Surface Mount
Power - Max:	200mW
Frequency - Transition:	250MHz
Current - Collector Cutoff (Max):	100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	68 @ 5mA, 5V
Series:	--
Resistor - Base (R1):	2.2 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	NPN - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction: FJV3113RMTF

FJV3113RMTF is a single bipolar (BJT) transistor device manufactured by Fairchild Semiconductor. It is pre-biased and designed to provide optimal performance in medium- and high power applications. This device features both low on-resistance and fast switching capability.

Application field: FJV3113RMTF

FJV3113RMTF transistors are widely used in a variety of medium- and high power applications such as DC/DC converters, high-power amplifiers, voltage regulators, motor control circuits, audio power amplifiers and radio frequency circuits. In addition, it is heavily used in automotive, consumer, and industrial applications.

Working Principle: FJV3113RMTF

The working principle of FJV3113RMTF transistors is based on the three-layer structure of bipolar junction transistors. It uses two oppositely charged layers of semiconductor material, called P-type and N-type. The FJV3113RMTF consists of a P-type substrate, An N-type emitter and a P-type base. The current gain of the device is determined by the ratio of the emitter area to the base area. When current is passed through the base of the transistor and the emitter, a charge is created, allowing others to flow between them. This current amplifies the signal, allowing it to be transmitted over a larger distance or amplified to a greater degree. This is known as the amplification effect of the transistor. In addition, FJV3113RMTF transistors can also be configured in configurations such as Single-Ended, CMOS, and Darlington to provide even more output current. Finally, the FJV3113RMTF transistor also has a variety of safety benefits, such as a built-in protection diode, making it a safer and more reliable choice for circuit designers.

Conclusion: FJV3113RMTF

In conclusion, FJV3113RMTF transistors are excellent for medium and high power applications such as DC/DC converters, high-power amplifiers, voltage regulators, motor control circuits, audio power amplifiers and radio frequency circuits. Its three-layer structure allows it to achieve good power amplification, output current, and protection features, making it a reliable choice for designers.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description