FJV3115RMTF Discrete Semiconductor Products |
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Allicdata Part #: | FJV3115RMTFTR-ND |
Manufacturer Part#: |
FJV3115RMTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 200MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJV3115RMTF Datasheet/PDF |
Quantity: | 1000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 33 @ 10mA, 5V |
Base Part Number: | FJV3115 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FJV3115RMTF is a single pre-biased type bipolar junction transistor (BJT) employed in a wide variety of applications. It is a popular choice for its performance traits such as its high gain and low noise, as well as its wide-bandwidth capabilities.
The bipolar junction transistor (BJT) is an electronic device that consists of three "junctions" between four layers of doped semiconductor material. The junction areas are the base, the emitter, and the collector. A BJT has three terminals, named the base, the emitter, and the collector.
The working principle of the FJV3115RMTF is based on the PN junction, where a PN diode is forward biased and placed in parallel with a reverse-biased junction at the collector. The reverse-biased junction is allowed to act as an insulator, preventing any current from flowing in the collector-base connection.
When current is applied to the base of the device, the PN junction is forward biased and the current flows through the base-emitter region. This causes a further increase in current at the collector-base junction, which effectively amplifies the current.
The FJV3115RMTF has a wide variety of potential applications. It can be used as a high gain amplifier in applications such as communications systems, where it can increase signal-to-noise ratio. It can also be used in oscillator and switch circuits due to its wide-bandwidth capabilities.
The device is also popularly used in power control applications, such as the switching of high current power sources. It is also suitable for use in low-distortion audio applications due to its low noise characteristics.
The FJV3115RMTF is a highly versatile device and can be used in a variety of other applications. Its high gain and low noise characteristics make it suitable for use in a wide range of electronic circuits. Its wide-bandwidth capabilities also make it suitable for various high-frequency applications.
The FJV3115RMTF is a single pre-biased type bipolar junction transistor (BJT) with a wide variety of potential applications. Its high gain and low noise characteristics make it suitable for use in a variety of audio, communications, power control, and high-frequency applications. Its wide-bandwidth capabilities make it a popular choice for a variety of circuits.
The specific data is subject to PDF, and the above content is for reference
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