FJV3107RMTF Allicdata Electronics
Allicdata Part #:

FJV3107RMTF-ND

Manufacturer Part#:

FJV3107RMTF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 200MW SOT23-3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: FJV3107RMTF datasheetFJV3107RMTF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Description

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The FJV3107RMTF is a single pre-biased field effect transistor. It is used in a wide range of applications including power management, wireless communications, LED lighting, and computing systems, as well as for low speed switching and driving circuits, such as analog switches and relays. The pre-biased option enables a simplified circuit design and reduces costs of providing separate biasing and supply voltage sources.

The FJV3107RMTF uses a P-channel MOSFET as the main active device. This type of transistor is advantageous because it operates with very low static power consumption, compared to other types of transistors. Additionally, its very low on-state resistance allows it to handle higher load currents.

The operating principle of the FJV3107RMTF is based on the construction of the P-channel MOSFET. The device has a gate which is separated from the source with an oxide layer. When a voltage is applied to the gate, it creates a channel between the source and the drain, which then allows a current to flow. The signal from the gate is then amplified by the circuitry internal to the device.

The FJV3107RMTF offers several advantages, such as low static power consumption and low on-state resistance. Additionally, the device\'s small size and low current consumption makes it easily adaptable to various applications. It also has good thermal performance and stability, as well as high speed switching.

The FJV3107RMTF is an ideal solution for applications that require a single pre-biased field effect transistor. It provides an efficient and cost-effective solution for a variety of applications such as power management, wireless communications, LED lighting, and computing systems. Its low static power consumption and high on-state resistance make it an ideal choice for low speed switching and driving circuits. Its small size, low current consumption, and thermal performance make it easily adaptable to different applications.

The specific data is subject to PDF, and the above content is for reference

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