Allicdata Part #: | FJV3107RMTF-ND |
Manufacturer Part#: |
FJV3107RMTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 200MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJV3107RMTF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FJV3107RMTF is a single pre-biased field effect transistor. It is used in a wide range of applications including power management, wireless communications, LED lighting, and computing systems, as well as for low speed switching and driving circuits, such as analog switches and relays. The pre-biased option enables a simplified circuit design and reduces costs of providing separate biasing and supply voltage sources.
The FJV3107RMTF uses a P-channel MOSFET as the main active device. This type of transistor is advantageous because it operates with very low static power consumption, compared to other types of transistors. Additionally, its very low on-state resistance allows it to handle higher load currents.
The operating principle of the FJV3107RMTF is based on the construction of the P-channel MOSFET. The device has a gate which is separated from the source with an oxide layer. When a voltage is applied to the gate, it creates a channel between the source and the drain, which then allows a current to flow. The signal from the gate is then amplified by the circuitry internal to the device.
The FJV3107RMTF offers several advantages, such as low static power consumption and low on-state resistance. Additionally, the device\'s small size and low current consumption makes it easily adaptable to various applications. It also has good thermal performance and stability, as well as high speed switching.
The FJV3107RMTF is an ideal solution for applications that require a single pre-biased field effect transistor. It provides an efficient and cost-effective solution for a variety of applications such as power management, wireless communications, LED lighting, and computing systems. Its low static power consumption and high on-state resistance make it an ideal choice for low speed switching and driving circuits. Its small size, low current consumption, and thermal performance make it easily adaptable to different applications.
The specific data is subject to PDF, and the above content is for reference
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