
Allicdata Part #: | FMG2G150US60-ND |
Manufacturer Part#: |
FMG2G150US60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT MOLDING 600V 150A 7PM-HA |
More Detail: | IGBT Module Half Bridge 600V 150A 595W Chassis Mo... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | -- |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 150A |
Power - Max: | 595W |
Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 150A |
Current - Collector Cutoff (Max): | 250µA |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | 7PM-HA |
Supplier Device Package: | 7PM-HA |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FMG2G150US60 is a module based on the insulated gate bipolar transistor (IGBT). It is designed to deliver superior performance in demanding power electronic applications. Offering high efficiency and reliability, the FMG2G150US60 is a popular choice among industries including automotive, renewable energy, and aerospace.
The FMG2G150US60 has various features that make it suitable for a variety of applications. It is designed to rated at an average collector current of 150A and an operating frequency of up to 16kHz. It also has a low saturation voltage and low losses, reducing switching loss and temperature rise. Additionally, the FMG2G150US60 is equipped with built-in protection features, including overcurrent limit, transient overvoltage limit, and over-temperature protection.
The FMG2G150US60 is built with the incredible properties associated with IGBTs, allowing for low losses, high reliability, and fast switching. In order for IGBTs to work, they must be connected in two different configurations. One configuration is the open-collector configuration, in which the power is applied to the collector and the other configuration is the closed-collector configuration, in which the power is applied to the emitter.
In the case of the FMG2G150US60, the power is applied to the collector due to its open-collector design. In this configuration, the IGBT behaves as a voltage-controlled switch. When the voltage applied to the collector is high enough, the IGBT turns on and allows current to flow. When the voltage applied to the collector is low, the IGBT turns off and blocks the flow of current. This allows the impedance of the load to remain constant regardless of the input voltage.
The FMG2G150US60 is a state-of-the-art module that offers a variety of benefits for a variety of applications. With its low saturation voltage, low losses, and fast switching capabilities, the FMG2G150US60 is a reliable, efficient, and cost-effective option for industries such as automotive, renewable energy, and aerospace. With its built-in protection features, the FMG2G150US60 provides superior performance when it comes to power electronic applications.
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