FMG2G50US60

Series:	--
Part Status:	Obsolete
IGBT Type:	--
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	50A
Power - Max:	250W
Vce(on) (Max) @ Vge, Ic:	2.8V @ 15V, 50A
Current - Collector Cutoff (Max):	250µA
Input Capacitance (Cies) @ Vce:	3.46nF @ 30V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	7PM-GA
Supplier Device Package:	7PM-GA

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Transistors - IGBTs - Modules: FMG2G50US60 Application Field and Working Principle

The FMG2G50US60 is a half-bridge module from ABB, with a power range of 11 kW. It features a low conduction and high switching losses, excellent thermal cycling properties, and very low gate charge. It is an insulated-gate bipolar transistor (IGBT), which is a three-terminal power semiconductor device, mainly used in applications such as motor drives, induction heating and uninterruptible power supplies (UPS) systems. This article will elaborate on its application field, as well as its working principle.

Application Field

As mentioned above, FMG2G50US60 is mainly used in motor drives, induction heating and UPS systems. In motor drives, the module is used to control the speed of the motor, as it can provide low losses and accurate speed control. It is also used in induction heating which is a contactless type of heating. The FMG2G50US60 allows energy to increase rapidly and maintains a high load power range, hence making it particularly suitable for this heating application. In UPS systems, this module is used for reliability and efficiency. It provides a power buffer for the AC supply, ensuring uninterrupted power in case of any power outage.

Working Principle

The working principle of the FMG2G50US60 module is the same as other IGBTs - it combines the conduction characteristics of a metal-oxide semiconductor field-effect transistor (MOSFET) and the bipolar junction transistor (BJT). The module consists of two MOS transistors connected in an inverse parallel (aka “anti-parallel”) fashion and a BJT in the middle. The IGBT is triggered by an electrical voltage applied to its gate terminal. The BJT provides current amplification, hence allowing higher current flow between collector and emitter. By properly controlling the base current of the BJT, the module can control the current flow between collector and emitter. Therefore, the module is able to modulate the load current, making it very useful in the applications aforementioned.

Conclusion

The FMG2G50US60 is a half-bridge module from ABB, with a power range of 11 kW. The module is an IGBT, which is mainly used in motor drives, induction heating, and UPS systems. Its working principle consists of two MOS transistors connected in an anti-parallel fashion and a BJT in the middle, and it is triggered by an electric voltage applied to its gate terminal. This module is capable of modulating the load currents, making it suitable for these power applications.

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