FMG2G75US60 Allicdata Electronics
Allicdata Part #:

FMG2G75US60-ND

Manufacturer Part#:

FMG2G75US60

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT MOLDING 600V 75A 7PM-GA
More Detail: IGBT Module Half Bridge 600V 75A 310W Chassis Mou...
DataSheet: FMG2G75US60 datasheetFMG2G75US60 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: --
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Power - Max: 310W
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 75A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 7.056nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 7PM-GA
Supplier Device Package: 7PM-GA
Description

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The FMG2G75US60 is an industrial grade IGBT module by Fuji Electric, belonging to a range of industrial grade ‘Super-2’ IGBT modules. This module is based on N-channel IGBTs, and exhibits very high power efficiency and current ratings. It is designed to resist short-circuiting, overvoltage, and overcurrent conditions, making it ideal for a range of high voltage and large current applications. In this article, we will discuss the application field and working principle of the FMG2G75US60 IGBT module.

Application Field

The FMG2G75US60 IGBT module is widely used in various industries due to its ability to handle high voltage and current ratings both safely and reliably. Its applications range from industrial motor drives to power supplies, DC/AC converters, and welding systems. This module is also well-suited for high power density applications due to its low weight and small size. It is also configured with a built-in diode and resistor, which helps to increase system reliability, as well as reduce costs.

Working Principle

The FMG2G75US60 IGBT module works by passing the voltage and current through N-channel MOSFETs, with their gate voltage controlled by Independent Gate Bias (IGBT) gate drivers. In this configuration, the gate driver supplies the gate voltage to the control MOSFET, which then controls the current flow. The MOSFETs are designed to switch rapidly, allowing for a wide range of power frequencies, voltage ranges, and currents. Due to the low on resistance of the MOSFETs, the power losses are minimized, and the power efficiency of the device is maximized.In addition to the IGBTs, the module also contains additional devices such as power resistors, EMI filters, and a built-in diode, which helps to protect the device from overcurrent and voltage conditions. The diode also helps to increase the system’s reliability and reduce cost, as it helps to reduce the number of components required.The FMG2G75US60 is an efficient and reliable IGBT module, which is perfect for a range of industrial applications. Its low on-resistance and built-in protection devices make it a great choice for any application requiring a high power density, high voltage, or high current rating. With its wide range of features, it is easy to see why the FMG2G75US60 is one of the most popular IGBT modules on the market today.

The specific data is subject to PDF, and the above content is for reference

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