FMG2G75US120

Series:	--
Part Status:	Obsolete
IGBT Type:	--
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	75A
Power - Max:	445W
Vce(on) (Max) @ Vge, Ic:	3V @ 15V, 75A
Current - Collector Cutoff (Max):	3mA
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	7PM-GA
Supplier Device Package:	7PM-GA

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FMG2G75US120 Application Field and Working Principle

Introduction

FMG2G75US120 is an insulated gate bipolar transistor (IGBT) module produced by Fuji Electric. It is an appropriate component for control of high power motors and switching power supplies. It contains two IGBTs with built-in low capacitance diode, allowing for connection to high speed inductive loads. The reverse-conducting capability provides fast recovery, making it suitable for operation in high frequency circuits. It also has a high power density and high blocking voltage capability up to 1200V, making it especially suitable for applications that require high power but also have limited space requirement.

Application Field

FMG2G75US120 has a wide variety of applications. Its high power density and reverse-conducting capabilities make it suitable for motor control, starting electric motors and controlling fluid pumps, for example. Its high blocking voltage of up to 1200V make it ideal for electric motor and motor control, such as in the ACS electric drives manufactured by Fuji Electric. Its high switching speed also makes it suitable for voltage and frequency converters.FMG2G75US120 also has potential in power supply by providing an appropriate solution for switching power supplies, uninterruptible power supplies (UPS) and inverters. It is also suitable for AC adapters and switching power supplies for consumer electronics, including televisions, video cameras and computer monitors.

Working Principle

FMG2G75US120 utilizes a technology known as V-groove insulation that separates the base port and gateport of the module. This prevents gate cross-talk and reduces the amount of logical circuitry necessary. In addition, the V-groove insulation increases the power dissipation of the module and reduces switching losses.The module utilizes the forward and reverse conduction capabilities of the two IGBTs to achieve its high power density, while the built-in low capacitance diodes minimize current losses. During operation, the two IGBTs are connected in parallel and the diode is forward biased. When the voltage across the IGBTs is low, the diode is reverse biased, allowing for a very high switching speed and reduced losses when compared to traditional devices. When the voltage across the IGBTs is raised, the diode will be forward biased, allowing for a fast recovery and reducing the time required for the device to switch back to its original state.

Conclusion

FMG2G75US120 is an IGBT module manufactured by Fuji Electric that is suitable for a wide range of applications, from motor control to switching power supplies and more. Its high power density and 1200V blocking voltage make it especially suitable for applications requiring high power but limited space. The module utilizes the V-groove insulation technology and reverse-conducting capability of the two IGBTs to achieve its high power density and fast switching speeds, while the built-in diode provides fast recovery times with minimal current losses.

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