FMG2G400US60 Allicdata Electronics
Allicdata Part #:

FMG2G400US60-ND

Manufacturer Part#:

FMG2G400US60

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT MOLDING 600V 400A 7PM-IA
More Detail: IGBT Module Half Bridge 600V 400A 1136W Chassis M...
DataSheet: FMG2G400US60 datasheetFMG2G400US60 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: --
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 400A
Power - Max: 1136W
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 400A
Current - Collector Cutoff (Max): 250µA
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 7PM-IA
Supplier Device Package: 7PM-IA
Description

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TheFMG2G400US60isacosteffective,highpowerIGBTmodulesolutiondesignedforthehighfrequencyinvertermarket.Itissuitableformanytypeofhighpowerapplication,frommotorcontroltoindustrialinverters.ThisIGBTmoduleisofferedbyeuropeanmanufacturerInfineonandfeatureshigh-densityIGBTswithalowprofilepackage.

TheFMG2G400US60iscomposedofaMOSFETgatechopper,twoIGBTswithParallelEmitterConfiguration(PEC)withenhancedCurrentCollectors,powderspacers,thermaldesignmaterialsandsomeotherdevices.

TheworkingprincipleoftheFMG2G400US60beginswiththeMOSFETgatechopper,whichisoperatedbyapplyingaDCvoltagetothegate.Theswitchisclosedwhenagateto-drainvoltagedifferencereachesaprederminedvalueanditactsasaswitchtoconnectorisconnectortodrain.

Then,thisswitchingvoltagewillbeusedtoactuatetwoIGBTswithParallelEmitterConfiguration(PEC).TheswitchingoftheseIGBTswillbedrivenbythegatevoltageoftheMOSFET.Whenigateto-drainvoltagedifferencereachesapredeterminedvalue,thetwoeigbtswillturnonsimultaneously.

ThePECconfigurationallowsIGBTstoseeparatelyconductcurrentsthroughtheirrespectiveemitters.ThisallowsbothIGBTstooperateatmaximumefficiencyandutilizetheirentirecurrentrange.

ThepowderspacersareusedtoreducethermalresistancebetweenthetopandbottomIGBTpackagesastheyaccumulatesomeoftheradiantheatgeneratedbytheIGBTs.

ThethermaldesignmaterialsusedintheFMG2G400US60havedesigndimensionssuchascoolingfinheightandwidththatareoptimizedtodelivermaximumthermalperformancenecessaryfordemandinghighpowerapplications.

Inconclusion,theFMG2G400US60isahighpowerIGBTmodulesolutionthatisideallysuitedforthosehighfrequencyinvertermarkets.Itisacosteffectivemodulesolutionthathasbeenoptimizedtodeliveroptimumperformanceforanyhighpowerapplication.TheMOSFETgatechoppingfunction,ParallelEmitterConfiguration(PEC),powderspacersandthermaldesignmaterialsareallstrategicallypartofthismodulesolutiontodeliverthebestinclassperformance.

The specific data is subject to PDF, and the above content is for reference

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