FP25R12KS4CBOSA1 Allicdata Electronics
Allicdata Part #:

FP25R12KS4CBOSA1-ND

Manufacturer Part#:

FP25R12KS4CBOSA1

Price: $ 71.23
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 1200V 40A
More Detail: IGBT Module Single 1200V 40A 230W Chassis Mount M...
DataSheet: FP25R12KS4CBOSA1 datasheetFP25R12KS4CBOSA1 Datasheet/PDF
Quantity: 1000
10 +: $ 64.74820
Stock 1000Can Ship Immediately
$ 71.23
Specifications
Series: --
Part Status: Active
IGBT Type: --
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 40A
Power - Max: 230W
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 1.5nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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The FP25R12KS4CBOSA1 is a polar IGBT module with a blocking voltage of 1200 volts, which is commonly used in fields such as renewable energy, industrial and consumer applications. It is part of a series of IGBT modules developed by Fairchild Semiconductor. The FP25R12KS4CBOSA1 contains a series of six high-performance integrated circuits, gate drivers and protective features, which together provide high switching performance, robustness and high reliability. This article will discuss the application field and working principle of FP25R12KS4CBOSA1.

The FP25R12KS4CBOSA1 is suitable for use in numerous applications, particularly those involving renewable energy, industrial and consumer applications. Renewable energy & Industrial applications benefit from the product’s high-speed switching performance which reduces switching losses. In turn, this improves total system efficiency. The module is also capable of providing higher switching performance. Consumer applications can benefit from its high speed switching performance as well as its small physical size.

The FP25R12KS4CBOSA1 working principle is based on the IGBT module structure. It features a component-level IGBT module structure, which contains multiple high-performance integrated circuits, gate drivers and protective features. The component-level IGBT module provides an optimized design that allows the module to operate with high current carrying capacity, minimum switching losses and low EMI noise. The gate drivers and protective features provide maximum protection against damage due to high-power surges.

The benefits of the FP25R12KS4CBOSA1 include improved efficiency, lower noise emission and increased reliability. The module can be used in a wide range of applications such as renewable energy and industrial, as well as consumer applications. The IGBT module structure of the FP25R12KS4CBOSA1 provides improved reliability and better power efficiency. The high-performance integrated circuits and gate drivers provide higher performance with minimal switching losses. Additionally, the module has a high blocking voltage of 1200V which provides enhanced protection from high-power surges.

In conclusion, the FP25R12KS4CBOSA1 is a polar IGBT module with a blocking voltage of 1200 volts and it is suitable for use in numerous applications, particularly those involving renewable energy, industrial and consumer applications. The component-level IGBT module provides an optimized design that allows the module to operate with high current carrying capacity, minimum switching losses and low EMI noise. The gate drivers and protective features provide maximum protection against damage due to high-power surges. The benefits of the FP25R12KS4CBOSA1 include improved efficiency, lower noise emission and increased reliability.

The specific data is subject to PDF, and the above content is for reference

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