FP25R12W2T4BOMA1

Series:	--
Part Status:	Active
IGBT Type:	--
Configuration:	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	39A
Power - Max:	175W
Vce(on) (Max) @ Vge, Ic:	2.25V @ 15V, 25A
Current - Collector Cutoff (Max):	1mA
Input Capacitance (Cies) @ Vce:	1.45nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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Introduction

The FP25R12W2T4BOMA1 module is a specifically designed Integrated Gate Bipolar Transistor (IGBT). This type of semiconductor component is used in various applications where high power and high efficiency is necessary. This component is designed to reduce losses by combining two transistors into one. It has two different functions, the gate of the transistor controls the voltage to the transistor and the portion that carries current. This type of component excels at switching applications, due in part to its low losses and high efficiency. In this article, we will discuss the application field and working principle of FP25R12W2T4BOMA1.

Application Field

The FP25R12W2T4BOMA1 is typically used in applications where high voltage and high current are needed. This includes applications that involve switching of high current loads such as generators, motors, transformers, and relays. It can also be used in applications that require precise control over current, such as for variable speed motors and drives. The module can also be used in power supplies, AC and DC drives, and inverters. Due to the high efficiency of the component, it is also commonly used in power systems such as power amplifiers, charging systems and other high-power systems.

Working Principle

The working principle of the FP25R12W2T4BOMA1 is based on a few main components. First, the collector is the part that carries current. It is connected to the emitter, which is usually made of metal and has a very low resistance to current. The base is the part of the transistor responsible for controlling the current to the collector. When current is sent to the base, it opens a path for current to flow from the collector to the emitter. The current then flows from the collector to the emitter, which results in the transistor switching states.The gate is the control element of the transistor, and is the part that receives signals from external sources. The gate is connected to the base, and when the gate receives a signal, the base changes the resistance of the path for current, thus controlling the current in the collector. This is known as the gate driving voltage, and is necessary to control the current in the collector.The FP25R12W2T4BOMA1 is also equipped with an Anti-Parallel Diode, which helps to protect the device in the event of a fault, such as overvoltage or overcurrent.

Overall, the FP25R12W2T4BOMA1 is an efficient and reliable component, and is ideal for high power applications. It is designed to switch high voltage and high current loads, and can also be used to precisely control current in applications that require it. Its low losses and high efficiency make it a great choice for applications like power amplifiers, charging systems, and other high-power systems. With its combination of two transistors into one, it is also a great choice for applications involving switching of high current loads, such as generators, motors, transformers, and relays. With its anti-parallel diode, it can also handle faults that can occur in challenging applications.

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