FP25R12KT4B15BOSA1

Series:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	25A
Power - Max:	160W
Vce(on) (Max) @ Vge, Ic:	2.15V @ 15V, 25A
Current - Collector Cutoff (Max):	1mA
Input Capacitance (Cies) @ Vce:	1.45nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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FP25R12KT4B15BOSA1 Application Field and Working Principle

Introduction to an IGBT Module

IGBT modules are an integration of power semiconductor devices to permit a higher switching frequency and reduced stress for each single device when compared to individual devices mounted on separate heatsinks. The FP25R12KT4B15BOSA1 is a 1200 V 25A IGBT module manufactured by Infineon.

Application Field

The FP25R12KT4B15BOSA1 is a 25A rated IGBT module specifically designed to be used in motor control applications. It can be used in switched-mode power supplies, motor controllers, robotic controllers, motor drives, solar energy inverters, and industrial automation systems.

Working Principle

IGBT modules use both a junction gate bipolar transistor (J-FET) and an insulated gate bipolar transistor (IGBT) in the same package. The two transistors are connected in series, so that even if the current passes through one transistor, the other will act as a backup, providing an additional level of protection.The working principle of the FP25R12KT4B15BOSA1 is as follows: the J-FET works as the low-side switch, controlling the current flow from the collector of the J-FET to the emitter. The IGBT works as the high-side switch, controlling the current flow from the emitter of the J-FET to the source. The IGBT can be turned on or off by applying a voltage to its gate terminal.

Benefits of Using an IGBT Module

The main benefits of using an IGBT module such as the FP25R12KT4B15BOSA1 include:

• Reduced system size and improved system efficiency due to higher current density.
• Reduced heat generation due to the elimination of separate heatsinks.
• Reduced switching losses and noise due to the higher switching frequency.
• Increased reliability due to the redundancy provided by the two transistors connected in series.
• Reduced cost due to the integrated package.

Conclusion

The FP25R12KT4B15BOSA1 is an IGBT module designed to be used in motor control applications. It is a 1200 V device with a rated current of 25A and provides several benefits to the user, such as reduction of system size, improved efficiency, reduced heat production, and enhanced reliability. The IGBT module works on the principle of two transistors connected in series, one being a J-FET switch that controls the current flow from the collector to the emitter, and the other being an IGBT switch that controls the current flow from the emitter to the source.

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