FP25R12W2T4PB11BPSA1

Series:	EasyPIM™ 2B
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	50A
Power - Max:	20mW
Vce(on) (Max) @ Vge, Ic:	2.25V @ 15V, 25A
Current - Collector Cutoff (Max):	1mA
Input Capacitance (Cies) @ Vce:	1.45nF @ 25V
Input:	Three Phase Bridge Rectifier
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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FP25R12W2T4PB11BPSA1 Application Field and Working Principle
Transistors – IGBTs – Modules are used in a wide variety of applications, from controlling electric and motors to amplifying signals. The FP25R12W2T4PB11BPSA1, an Insulated Gate Bipolar Transistor (IGBT) module, is designed for high-speed switching applications such as motor control, power electronics, and renewable energy power converters.An IGBT is a type of power transistor that combines the advantages of both a transistor and a thyristor in a single package. It consists of two back-to-back PN-junctions that are controlled by a gate voltage and joined together via a common connection. It is unipolar, meaning that the current only flows in one direction through the device. This makes it capable of handling large voltage and current ranges. The main advantage of an IGBT compared to other power transistors is its ability to switch rapidly, making it suitable for applications that require higher switching speed.The FP25R12W2T4PB11BPSA1 module is a specialized version of the IGBT; its main feature is a higher gate drive current capability. The module contains four IGBTs and four high-speed diodes, optimized for high-speed switching. The IGBTs have a low on-state voltage drop and high current gain. In addition, they feature a reliable and robust latch-up protection. The module is designed to provide exceptional performance in high-frequency switching applications. It has a peak on-state voltage rating of 1200V and a maximum continuous collector current of 25A.The working principle of the FP25R12W2T4PB11BPSA1 module is the same as any other IGBTs. When a voltage is applied to the gate, a current is generated that creates a magnetic field in the gate. This field controls the flow of current between the emitter and collector as well as between the gate and the collector. When the voltage at the gate is turned off, the magnetic field dissipates and the current stops flowing. The main applications of the FP25R12W2T4PB11BPSA1 module are motor control, power electronics, and renewable energy converters. It is used in applications that require high-speed switching, such as motor control, as it can switch quickly and handle large current and voltage ranges. It is also used in power electronics to control the flow of energy, and in renewable energy converters to control the conversion of energy from one form to another.The FP25R12W2T4PB11BPSA1 module offers several advantages over other types of power transistors. It is unipolar, meaning that the current only flows in one direction, and has a low on-state voltage drop and high current gain. It is also capable of handling high-speed switching applications and its latch-up protection ensures reliable and robust operation. Finally, its wide voltage and current rating make it suitable for a variety of applications.In conclusion, the FP25R12W2T4PB11BPSA1 module is a specialized version of the IGBT designed for high-speed switching. It is capable of handling large voltage and current ranges, making it suitable for motor control, power electronics, and renewable energy power converters. It offers several advantages over other types of power transistors, including its unipolar operation, low on-state voltage drop, high current gain, and reliable latch-up protection.

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