FP25R12KT4B11BOSA1 Allicdata Electronics
Allicdata Part #:

FP25R12KT4B11BOSA1-ND

Manufacturer Part#:

FP25R12KT4B11BOSA1

Price: $ 43.35
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 1200V 40A
More Detail: IGBT Module Trench Field Stop Three Phase Inverter...
DataSheet: FP25R12KT4B11BOSA1 datasheetFP25R12KT4B11BOSA1 Datasheet/PDF
Quantity: 1000
10 +: $ 39.40590
Stock 1000Can Ship Immediately
$ 43.35
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 25A
Power - Max: 160W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 1.45nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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Currently, the advancement of science has prospered with the development of technology and the omnipresence of electrical components. One such product which has captured the imagination of the modern world is the FP25R12KT4B11BOSA1, manufactured and sold by Filtrona, an Italian-based industrial components manufacturer and distributor. This article will discuss the various application fields and working principles of the FP25R12KT4B11BOSA1.

The FP25R12KT4B11BOSA1 is a highly efficient and reliable Insulated Gate Bipolar Transistor (IGBT) module. It is a 4-pin power module designed for power applications and has the ability to switch high currents with very low input drive power. As the name implies, it is insulated for safety and prevents unwanted surprises. This module also has an integrated free-wheel diode, eliminating the need for an external one. In addition, this module has a higher current rating than other counterparts, making it suitable for use in industrial applications.

The FP25R12KT4B11BOSA1 has a wide range of applications in the industrial sector. Its main application fields include: power switching; power converters; motor control; lighting control; and welding. In the medical field, it is used in MRI scanners and medical imaging technology. Additionally, this module is used in industrial automation systems and consumer electronic products such as DVD players and entertainment systems.

The FP25R12KT4B11BOSA1 uses a insulated gate bipolar transistor (IGBT) to perform a switching action. The module is made up of several components, including a MOSFET, IGBT transistor, and a freewheeling diode. An IGBT is a three-terminal power semiconductor device which combines the features of the insulated gate transistors and the bipolar junction transistors. When current flows through the IGBT, it switches on and conducts, directly connecting the output with the load. When the current flow is reversed, the IGBT switches off, disconnecting the output from the load.

The FP25R12KT4B11BOSA1 is designed for the separation of circuits and makes it possible for the load and the source circuits to be broken and reconnected. This makes it possible for the circuit to switch off when no current is flowing. The IGBT transistor requires a relatively low gate threshold voltage and gate drive power, making it suitable for a wide range of loads and applications.

In summary, the FP25R12KT4B11BOSA1 is a powerful and reliable IGBT module which is suitable for a wide range of industrial applications. It has an integrated free-wheel diode which eliminates the need for an external one. Moreover, it is efficient and cost-effective, making it one of the most popular IGBT modules in the market. It is the ideal choice for any power conversion or switching application, and is guaranteed to deliver reliable results.

The specific data is subject to PDF, and the above content is for reference

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