FR606-T Allicdata Electronics

FR606-T Discrete Semiconductor Products

Allicdata Part #:

FR606DITR-ND

Manufacturer Part#:

FR606-T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE GEN PURP 800V 6A R6
More Detail: Diode Standard 800V 6A Through Hole R-6
DataSheet: FR606-T datasheetFR606-T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: R6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: FR606
Description

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Diodes - Rectifiers - Single

FR606-T is a single Schottky barrier rectifier, rated under the conditions of peak reverse voltage, DC reverse voltage and average forward current. It provides a low forward voltage drop and a high current capacity. This makes it suitable for many automotive and industrial applications. In this article we will discuss the application field and the working principle of FR606-T.

Application Fields

The FR606-T is a Schottky Barrier Rectifier, which is ideal for low forward voltage drop and high-current capacity applications. It is suitable for applications such as UPS/inverters, battery chargers, AC-DC power supplies and DC-DC converters, lighting, etc. In particular, it is widely used for power supplies and is also suitable for many automotive applications such as power windows, wiper motors, brake lights, etc.

Working Principle

At the heart of the FR606-T is an semiconductor junction between two different types of materials, called a PN junction. When a voltage potential is applied to the PN junction, it creates a field that causes electrons and holes to be forced across the junction. As these electrons and holes recombine, they form a depletion region. This depletion region acts as an insulator between the n-type and the p-type, allowing current to flow only in one direction - the right way. When the voltage potential is reversed, the depletion region detaches and due to the built-in electric field, the electrons and holes are forced away from the junction. This prevents the current from flowing in the wrong direction, making the device a rectifier. The Schottky barrier on FR606-T is formed when a metal-semiconductor junction is formed. This junction reduces the amount of energy necessary for electrons to flow through the device and thus reduces the forward voltage drop, making it ideal for low voltage applications.

Conclusion

The FR606-T is an ideal single Schottky barrier rectifier for many automotive and industrial applications. It provides a low forward voltage drop and high current capacity, making it suitable for a variety of applications such as UPS/inverters, battery chargers, AC-DC power supplies, DC-DC converters, lighting, etc. Its working principle is based on a semiconductor PN junction and a Schottky barrier formed by a metal-semiconductor junction.

The specific data is subject to PDF, and the above content is for reference

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