Allicdata Part #: | FR606GTA-ND |
Manufacturer Part#: |
FR606GTA |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | SMC Diode Solutions |
Short Description: | DIODE GPP 800V 6A R-6 |
More Detail: | Diode Standard 800V 6A Through Hole R-6 |
DataSheet: | FR606GTA Datasheet/PDF |
Quantity: | 1000 |
4500 +: | $ 0.08504 |
Series: | -- |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 6A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 6A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 500ns |
Current - Reverse Leakage @ Vr: | 10µA @ 560V |
Capacitance @ Vr, F: | 150pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | R6, Axial |
Supplier Device Package: | R-6 |
Operating Temperature - Junction: | -65°C ~ 150°C |
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The FR606GTA is a general-purpose 600V silicon rectifier diode intended for use in a variety of commercial and consumer electronics applications. The FR606GTA provides the electrical and physical characteristics necessary to produce reliable electronic gadgets. This device features low forward voltage drop, low leakage current, and thermal stability.
The FR606GTA has a maximum repetitive peak forward current rating of 3.0 A, a maximum forward voltage drop of 0.4 V at 1.0 A, and a reverse leakage current of 0.5 uA at 25°C. Its low power loss coupled with low junction capacitance makes it suitable for high-speed switching. This diode offers fast recovery time and low reverse recovery current, making it suitable for applications such as power switching, lighting, solenoid and other circuits.
In addition to the features mentioned above, the FR606GTA offers high surge current capability and temperature cycling capability. This ensures high reliability and long life. Its surface mountable DO-41 package makes it suitable for space-saving applications. The diode is designed for operation over the temperature range of -55°C to +125°C.
The working principle of the FR606GTA can be characterized by its two basic semiconductor materials, the p-type and n-type semiconductors. When connected in series, inversion layers from the p-type material will act as a current drain while n-type material will act as a current source. Thus, when forward biased, an electron flow is produced, while when reverse biased, a hole flow is produced. As forward voltage bias increases, the forward voltage drop (Vf) will increase until the peak forward current rating of the diode is reached. Conversely, as reverse voltage bias increases, the reverse voltage will increase until the peak reverse current is reached.
In summary, the FR606GTA diode is a 600V, general-purpose silicon rectifier diode with low forward voltage drop, low leakage, and good switching speed. It exists in DO-41 package and has the capability of high surge current, temperature cycling capability, and long life. Furthermore, it utilizes the two basic semiconductor materials, the p-type and n-type, to operate, which is the working principle of all semiconductor diodes.
The specific data is subject to PDF, and the above content is for reference
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