Allicdata Part #: | FS200R07N3E4RB11BOSA1-ND |
Manufacturer Part#: |
FS200R07N3E4RB11BOSA1 |
Price: | $ 111.99 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 200A |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FS200R07N3E4RB11BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 101.80000 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 200A |
Power - Max: | 600W |
Vce(on) (Max) @ Vge, Ic: | 1.95V @ 15V, 200A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 13nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FS200R07N3E4RB11BOSA1 Application Field and Working PrincipleThe FS200R07N3E4RB11BOSA1 is a field-stoppable Insulated Gate Bipolar Transistor (IGBT) module. It has the capability to reduce gate current by effectively utilizing the FWD (Field Weakener Diode) function. This device features superior turn-off characteristics, and is suitable for various applications such as Industrial Inverter, Motor Control and Uninterruptible Power Supply (UPS).
The theoretical working principle of this FS200R07N3E4RB11BOSA1 module is described below. This module consists of two semiconductor layers, namely the N-type semiconductor layer and the P-type semiconductor layer. The N-type semiconductor layer consists of N-type drift layers and a Gate section, which are connected in parallel. The P-type semiconductor layer consists of P-type drift layers and a Gate section, which are also connected in parallel. Both the N-type and P-type semiconductor layers are then joined together to a substrate.
When voltage is applied to the Gate section of the N-type semiconductor layer, holes (electrons) are injected into the N-type drift layers, forming a P-type depletion region, which is connected to the Gate section. When voltage is applied to the Gate section of the P-type semiconductor layer, electrons (holes) are injected into the P-type drift layers, forming an N-type depletion region, which is connected to the Gate section. By utilizing this depletion region, it is possible to control the forward voltage drop of the BOSA1 module.
In addition, the FS200R07N3E4RB11BOSA1 module has two additional functions associated with it – the FWD (Field Weakener Diode) and the FWB (Field Wide Bandwidth) functions.
The FWD (Field Weakener Diode) function is designed to reduce the gate current and reduce the forward voltage drop of the BOSA1 module. It works by using the depletion region in the P-type semiconductor layer to reduce the flowing current and prevent the further pull-up circuit from functioning properly.
The FWB (Field Wide Bandwidth) function is used to minimize the ripple effect caused by the current fluctuations that occur when the frequency of the switching device changes. This function works by adjusting the characteristics of the field-stoppable semiconductor components according to the frequency changes, thus allowing stable operation even at higher switching frequencies.
The FS200R07N3E4RB11BOSA1 module can be used in a variety of applications such as Industrial Inverter, Motor Control, Uninterruptible Power Supply (UPS), etc. This type of device is capable of providing high performance, stability and overall efficiency. With its advanced features and functions, the FS200R07N3E4RB11BOSA1 is a highly reliable module that is suitable for various industrial applications.
The specific data is subject to PDF, and the above content is for reference
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