FS200R07PE4BOSA1

Series:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):	650V
Current - Collector (Ic) (Max):	200A
Power - Max:	600W
Vce(on) (Max) @ Vge, Ic:	1.95V @ 15V, 200A
Current - Collector Cutoff (Max):	1mA
Input Capacitance (Cies) @ Vce:	12nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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FS200R07PE4BOSA1 Application Field and Working Principle

The FS200R07PE4BOSA1 is a part of the IGBT family and is an insulated gate bipolar transistor (IGBT) module, a type of transistor used in high-power applications. It can be used in many applications such as switching, inverter, and converters.

What is an IGBT Module?

An IGBT module is a type of transistor which has an insulated gate that operates as both an emitter and a collector. This transistor has two terminals - the emitter and the collector. When electric current is applied to the emitter, it creates a corresponding electric field on the collector. This can be used to either open or close the switch, in order to regulate and control the power of the current. An IGBT module thus works as a switch and can be used to control the current in an electrical circuit.

Features of the FS200R07PE4BOSA1

The FS200R07PE4BOSA1 is an IGBT module with a maximum current rating of 160 Amps. This module has a Vces voltage of 800 V, a gate current of 6.5 Amps, and a maximum gate voltage of 12V. This module can handle peak currents of up to 220 A, and a maximum temperature operation limit of 175°C. It has a voltage gain of -1.15 V/V and a dielectric strength of 8 kV.

Applications

Due to its high current rating, the FS200R07PE4BOSA1 is used in a variety of applications. It is often utilized as a switch in rectifiers and inverters, as well as in switching DC-DC converters, UPS, welding machines, and power supplies. Because of its low voltage gain and high reliability, the FS200R07PE4BOSA1 is also used in photovoltaic systems, motor control systems, electric traction systems, and AC drives.

Working Principle

The FS200R07PE4BOSA1 is a four-pin IGBT module with its gate, base, collector, and emitter all embedded in one package. When power is applied to the gate of the FS200R07PE4BOSA1, an electric field is created between the base and the collector, which allows current to flow from the collector to the emitter. The electric field is then used to control the current flowing through the transistor. When the current flow is interrupted or stopped, the electric field is destroyed, effectively turning off the transistor. In this way, the FS200R07PE4BOSA1 can be used as a switch in high-power applications.

Conclusion

The FS200R07PE4BOSA1 is an IGBT module with a maximum current rating of 160 A and a maximum temperature operation limit of 175°C. This transistor has many applications such as in rectifiers, inverters, switching DC-DC converters, photovoltaic systems, and motor control systems. The working principle of the FS200R07PE4BOSA1 is based on the application of an electric field to the transistor, allowing current to flow from the collector to the emitter. This electric field can be used to open and close the switch, in order to regulate and control the power of the current.

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