FS20R06VE3BOMA1 Allicdata Electronics
Allicdata Part #:

FS20R06VE3BOMA1-ND

Manufacturer Part#:

FS20R06VE3BOMA1

Price: $ 12.53
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 600V 20A
More Detail: IGBT Module Three Phase Inverter 600V 25A 71.5W C...
DataSheet: FS20R06VE3BOMA1 datasheetFS20R06VE3BOMA1 Datasheet/PDF
Quantity: 1000
40 +: $ 11.38950
Stock 1000Can Ship Immediately
$ 12.53
Specifications
Series: --
Part Status: Not For New Designs
IGBT Type: --
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 25A
Power - Max: 71.5W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 1.1nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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FS20R06VE3BOMA1 is a type of IGBT module, which means Insulated-Gate Bipolar Transistor. It is a three-terminal power semiconductor device and it is primarily used in applications such as automotive, renewables, utilities and traction. The FS20R06VE3BOMA1 module consists of two IGBTs, a freewheeling diode and a gate drive circuit which are all mounted in a single package, making it a very efficient power device.

The IGBT is a 6th generation, insulated gate bipolar transistor. It is very efficient, has fast switching speed and is widely used in power electronics applications. The FS20R06VE3BOMA1 module has a high current rating of 20 A and a voltage rating of 600 V. It is an advanced version of its predecessors, which are the FS12 series and FS30 series.

The working principle of an IGBT is based on the diode rectification principle. When a positive voltage is applied to the gate terminal, electrons are attracted to the gate terminal. These electrons then attract holes to the base region of the device, creating an n-type and p-type junction in the base region. This n-type and p-type junction consists of a reverse biased diode, and the electrons and holes start to flow across the junction, resulting in a current flow between the collector and emitter terminals.

This current flow allows the FS20R06VE3BOMA1 module to act as an efficient switching device, making it an ideal choice for a wide range of applications. The module has a wide variety of advantages, including high current and voltage ratings, low switching and collector-emitter leakage currents and low power dissipation. The module also provides excellent reliability and easy installation.

FS20R06VE3BOMA1 can be used in a wide range of applications, including automotive, renewable energy, utilities, traction and industrial applications. In automotive applications, the module can be used to provide high power switching solutions and improve efficiency. In renewable energy applications, the module allows for fast and precise control of AC inverters. In utilities and traction applications, the module is used to provide voltage ratings of up to 600V and high switching performance. In industrial applications, the module allows for higher power control and more accurate switching.

In summary, the FS20R06VE3BOMA1 module is a highly efficient, three-terminal power semiconductor device that allows for precise control of a wide range of applications. It has a variety of advantages, including high current and voltage ratings, low switching and collector-emitter leakage currents, low power dissipation and excellent reliability. The module also offers easy installation and is ideal for automotive, renewable energy, utilities, traction and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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