Allicdata Part #: | FS200R12KT4RBOSA1-ND |
Manufacturer Part#: |
FS200R12KT4RBOSA1 |
Price: | $ 152.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE 1200V 200A |
More Detail: | IGBT Module NPT Three Phase Inverter 1200V 280A 10... |
DataSheet: | FS200R12KT4RBOSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 138.31600 |
Series: | -- |
Part Status: | Active |
IGBT Type: | NPT |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 280A |
Power - Max: | 1000W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 200A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 14nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FS200R12KT4RBOSA1 is the newest IGBT module from Mitsubishi Electric, which is an upgraded version of the FS100R12KT4 module. It is the most powerful and efficient IGBT module with low power and high performance. This module is mainly used in applications such as switching power conversion, solar power converter and motor drives.
The FS200R12KT4RBOSA1 module is a three-level module, which features a fast switching reverse conducting IGBT and a main current control module. It is made up of several semiconductor elements that provide the gate protection and isolation, which helps to improve the reliability. Furthermore, it is designed with a built-in self-protection circuit, which helps to protect the module from overvoltage and overcurrent, while also minimizing losses. This module also features the ability to control the switching sequence, which helps to prevent the module from being damaged caused by imbalance current.
The working principle of the FS200R12KT4RBOSA1 module is based on the use of insulated-gate bipolar transistors (IGBTs). These are semiconductors with a negative gate threshold voltage, which allows them to be switched on and off as well as providing fast switching of currents. Additionally, the module has an integrated collector-emitter voltage mode, which helps to provide low switching losses or fast turn-off operation. Furthermore, the module can be used in parallel or series connection, ensuring efficient and reliable operation.
In addition, the FS200R12KT4RBOSA1 module has various advantages compared to other IGBT modules. These advantages include higher operating temperature range up to 85°C, higher power density and better performance than other IGBT modules. Moreover, it has a wide range of input voltage, which enables it to be used in various applications such as renewable energy conversion and AC motor control. Furthermore, it has a low power loss and a high switching frequency, allowing for faster switching time and more power savings.
In conclusion, the FS200R12KT4RBOSA1 IGBT module from Mitsubishi Electric is a powerful and efficient module that is suitable for various applications, such as solar power converter, motor drives and switching power conversion. Its working principle is based on the use of IGBTs, which provides the module with a negative gate threshold voltage, fast switching of currents and low switching losses. Additionally, it has various advantages such as higher power density, low power loss and a wide range of input voltage. Therefore, this module is an ideal choice for various applications.
The specific data is subject to PDF, and the above content is for reference
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