FZT1049ATA Allicdata Electronics

FZT1049ATA Discrete Semiconductor Products

Allicdata Part #:

FZT1049ATR-ND

Manufacturer Part#:

FZT1049ATA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 25V 5A SOT-223
More Detail: Bipolar (BJT) Transistor NPN 25V 5A 180MHz 2.5W Su...
DataSheet: FZT1049ATA datasheetFZT1049ATA Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 330mV @ 50mA, 5A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Power - Max: 2.5W
Frequency - Transition: 180MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: FZT1049A
Description

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The FZT1049ATA is a high-gain, high-performance transistor used in a variety of applications. It belongs to the family of single bipolar junction transistors or BJTs, and is often used in the switching and amplification of analog and digital signals. It is suitable for low-power consumption and has a high voltage rating of up to 100V, making it suitable for a variety of applications.

The FZT1049ATA is a NPN transistor with a maximum collector-emitter voltage of 100VDC and a maximum collector-base voltage of 100VDC. It has a low current gain of approximately 25 to 70 and a collector-emitter saturation voltage of 1.1V. The device has a collector-emitter breakdown voltage of up to 100V and an operating temperature range of -55 to +150°C, making it a suitable choice for most industrial and automotive applications.

The FZT1049ATA uses a base-emitter junction as its input device, which can be used for both switching and amplification. The base-emitter junction is a P-N junction that is forward biased with a small current which enables charge carriers to cross the junction. This frees up the larger amount of electrons on the emitter side, which are then available to move to the collector side when the base-collector junction is forward biased.

Once the transistor is triggered, a large current is able to flow between the collector and the emitter. This results in a current amplification of the small input current, allowing the user to control a large current with a small input current. The base and the emitter are generally responsible for the transistor’s low power characteristics, and the current gain of the device is determined by the collector-base voltage.

The FZT1049ATA can be used in a wide range of applications, such as amplifiers, switch circuits, linear and switching power supplies, and oscillators. It can be used in automotive, industrial, communications, and consumer electronics applications. It is suitable for a variety of applications that require high voltage and low current operation. Examples include audio amplifiers, switching supplies, and portable devices.

The FZT1049ATA is a high-power, high-performance transistor used in a wide range of applications. It is a single bipolar junction transistor or BJT, suitable for low-power consumption and high voltage ratings, making it suitable for all kinds of applications. It is commonly used in the switching and amplification of both analog and digital signals, making it extremely versatile. It is often used in automotive, industrial, communications, and consumer electronics applications, and is capable of providing reliable operation even in the toughest of conditions.

The specific data is subject to PDF, and the above content is for reference

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