FZT1151ATA Discrete Semiconductor Products |
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Allicdata Part #: | FZT1151ATR-ND |
Manufacturer Part#: |
FZT1151ATA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 40V 3A SOT-223 |
More Detail: | Bipolar (BJT) Transistor PNP 40V 3A 145MHz 2.5W Su... |
DataSheet: | FZT1151ATA Datasheet/PDF |
Quantity: | 15000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250mA, 3A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 250 @ 500mA, 2V |
Power - Max: | 2.5W |
Frequency - Transition: | 145MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | FZT1151A |
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The FZT1151ATA is a bias-compensated NPN transistor produced by Fairchild Semiconductor. It has a high gain and low noise, making it an ideal choice for a wide range of applications. This article will discuss the application field of the FZT1151ATA and its working principle in detail.
Application Field
The FZT1151ATA is most commonly used in analog and linear applications. It is often used in op-amp biasing and in precision amplification circuits. It features a split-phase emitter termination, which enables it to provide both high gain and low noise in the same circuit. In addition, it can also be used in high-speed switching applications, such as switched-mode power supplies.
The FZT1151ATA is also suitable for use in audio applications, such as pre-amplifiers and power amplifiers. Its relatively low noise and high gain make it a good choice for these types of applications. Additionally, it is also a popular choice for digital circuits, as it can handle large input and output impedance signals.
Working Principle
The FZT1151ATA is a single bipolar junction transistor (BJT) type device, meaning it is composed of three layers of semiconductor material. The three layers are known as the emitter, base, and collector. When a voltage is applied to the base, a current flows between the collector and the emitter, which can then be used to amplify an incoming signal. The split-phase emitter termination of the FZT1151ATA allows for better current amplification, reducing voltage and noise in the circuit.
The FZT1151ATA has a total transistor power dissipation value of 230mW, and a collector-emitter voltage rating of 40V. It also has a junction temperature of 175C, a thermal resistance rating of 120 C/W and a current gain of 50 to 200, making it a very efficient device. Finally, the switching time of the FZT1151ATA is 20ns maximum, making it suitable for many high-speed applications.
In summary, the FZT1151ATA is a single bipolar junction transistor produced by Fairchild Semiconductor. It is mainly used in analog and linear applications, such as op-amp biasing, precision amplification, and high-speed switching. It has a high gain, low noise, and a relatively fast switching time, making it a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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