FZT1053ATC Allicdata Electronics
Allicdata Part #:

FZT1053ATC-ND

Manufacturer Part#:

FZT1053ATC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 75V 4.5A SOT223
More Detail: Bipolar (BJT) Transistor NPN 75V 4.5A 140MHz 2.5W ...
DataSheet: FZT1053ATC datasheetFZT1053ATC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 4.5A
Voltage - Collector Emitter Breakdown (Max): 75V
Vce Saturation (Max) @ Ib, Ic: 440mV @ 200mA, 4.5A
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Power - Max: 2.5W
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: FZT1053A
Description

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FZT1053ATC is a single bipolar (BJT) transistor. As a type of electronic component, it has multiple uses, and its components can be used as a switch, amplifier, or controller in its target application. This article aims to give an overview of the FZT1053ATC application field and working principle.

This particular single bipolar transistor can be used in many applications, including communications systems, digital logic systems, portable computers, microprocessors, memory devices, line drivers, power amplifiers, power switching supplies, and audio amplifiers. It serves as a transistor switch by controlling the flow of current or voltage in a circuit. It can be used to amplify or switch signals in a circuit, which is useful for applications such as sound amplification or digital data transmission.

The FZT1053ATC is composed of three basic elements: the emitter, collector and base. It operates in a structure known as the common-base arrangement. Here, the emitter is connected to the base via a diode while the collector is connected to the base via two resistors. When a voltage is applied to the emitter, electrons are released and are drawn to the base. This causes an electric current to flow through the base, collector and emitter, producing an amplified current in the collector. This is known as the active region of the transistor.

The FZT1053ATC also has three typical operating regions: the cut-off region, the active region and the saturation region. In the cut-off region, no current is allowed to flow. This eliminates most of power usage by the device. In the active region, the electrons are released from the emitter to produce a controlled current flow in the circuit. Finally, in the saturation region, the transistor is maximally conducting and current is allowed to flow freely.

The FZT1053ATC can operate up to a maximum voltage of 40 volts and a maximum power dissipation of 0.8 watts. It has a high current gain, high switching speed and maximum breakdown voltage of 25 volts. The device also features a low noise operation, which is due to its low input impedance and high gain-bandwidth product of 110 MHz. It also has an operating temperature range of –55 to +125 °C.

In summary, the FZT1053ATC is a single bipolar (BJT) transistor with multiple applications, including communications systems, digital logic systems, microprocessors, memory devices, line drivers and power amplifiers. It features three operating regions, a maximum voltage of 40 volts and a power dissipation of 0.8 watts. It is also known for its low noise operation and high current gain. In addition, it has a high switching speed, a maximum breakdown voltage of 25 volts and an operating temperature range of -55 to +125 °C.

The specific data is subject to PDF, and the above content is for reference

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