FZT1149ATA Discrete Semiconductor Products |
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Allicdata Part #: | FZT1149ATR-ND |
Manufacturer Part#: |
FZT1149ATA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 25V 4A SOT-223 |
More Detail: | Bipolar (BJT) Transistor PNP 25V 4A 135MHz 2.5W Su... |
DataSheet: | FZT1149ATA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 350mV @ 140mA, 4A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 250 @ 500mA, 2V |
Power - Max: | 2.5W |
Frequency - Transition: | 135MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | FZT1149A |
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The FZT 1149 ATP or FZT 1149 ALP are two variants of an NPN BJT (Bipolar Junction Transistor) belonging to a family of transistors produced by ON Semiconductor. This family and its variants are widely used in telecommunication and automotive application fields. This article will discuss the features and working principles of the FZT 1149, including its application fields and working principles.
The FZT 1149 is a dual-design BJT that offers an increased gain and improved noise figure compared to previous single-transistor designs. A standard FZT 1149 has a base-emitter voltage of 630mV and a collector-emitter saturation voltage of 180mV. These characteristics allow it to be used in a wide range of applications, including power amplifier, RF mixer, preamplifier, low noise amplifier, and switching applications. Furthermore, these transistors are capable of handling up to 200mA of collector current, which makes them suitable for use in high-power applications.
At the foundation of the FZT 1149\'s working principles is an NPN BJT, which is a type of transistor that has three terminals: a base, a collector, and an emitter. The BJT operates by the electrons being conducted across the collector-base junction when a current is applied to the base. This results in a flow of current from the collector to the emitter. The amount of current that flows from collector to the emitter is determined by the amount of base current and the value of the base-emitter junction voltage.
The FZT 1149 is specifically designed for high-frequency applications due to its high-gain characteristics and symmetrical distribution of base-emitter voltage. Furthermore, its high-gain design reduces power dissipation and heat generation, allowing it to operate more efficiently at higher frequencies. Additionally, since FZT 1149 incorporates a low-noise design, it can be used in sensitive communication systems and other electronic applications requiring low levels of background noise.
As mentioned earlier, the FZT 1149 is widely used in a number of application fields, particularly those related to telecommunication and automotive devices. In telecommunications, it is commonly used as a power amplifier, RF mixer, preamplifier, and low-noise amplifier. In the automotive sector, it is integral to devices such as voltage regulators and switching systems. These transistors are also well suited for use in power supply systems, where their high-gain characteristics can help ensure efficient regulation of line currents.
To summarize, the FZT 1149 is an NPN BJT which offers a high-gain, low-noise design for use in a variety of applications, including power amplifiers, RF mixers, preamplifiers, and low noise amplifiers. It is widely used in the telecommunications and automotive industries, as well as power supply systems, due to its improved gain and noise characteristics. Ultimately, the FZT 1149 is an excellent choice for anyone who needs a reliable, high-performance single-transistor design.
The specific data is subject to PDF, and the above content is for reference
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