FZT849TA Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	7A
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	350mV @ 300mA, 6.5A
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1A, 1V
Power - Max:	3W
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Base Part Number:	FZT849

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Introduction to FZT849TA

FZT849TA is a type of bipolar junction transistor (BJT). BJTs are an electronic components used in a variety of electronic circuits for amplifying and switching electronic signals. FZT849TA is a single transistor, meaning it consists of only three terminals — a collector, base, and emitter.

Application Field of FZT849TA

FZT849TA transistors have a wide array of applications. Owing to their small size, they are widely used in low-power automated control systems and digital circuits. FZT849TA transistors can be used in circuits requiring high frequency operations, such as in local oscillators or in samplers. They are also widely used in LED (light-emitting diode) display drivers and as electronic switches in applications such as relays and solenoids. FZT849TA transistors can be used as amplifiers in both AC and DC circuits. They are commonly employed in audio amplifier stages and receivers, as well as quiescent current stabilizers, constant current sources, and low-noise amplification.

Working Principle of FZT849TA

The mathematics underlying the operation of FZT849TA transistors is described by the Ebers-Moll equation. This equation gives the collector current as a function of the base-emitter voltage and the applied collector-emitter voltage.The operation of FZT849TA transistors is based on the principles of injection, doping, and recombination. Under normal operation, electrons from the emitter are injected into the base, ultimately resulting in a current flow between the collector and emitter. The current gain of FZT849TA transistors, referred to as the h FE value, is determined by the amount of current that is allowed to flow from the collector to the emitter when a given voltage is applied to the base and collector. The higher the h FE value, the greater the current gain of the transistor.

Conclusion

In conclusion, FZT849TA transistors are a type of bipolar junction transistor that have a wide range of applications in both AC and DC circuits. Their small size makes them well suited for use in low-power automated control systems, LED display drivers, audio amplifier stages and receivers, as well as quiescent current stabilizers, constant current sources, and low-noise amplification. The mathematical description of FZT849TA operation is given by the Ebers-Moll equation, which accounts for the injection, doping, and recombination of electrons within the transistor structure. The current gain of FZT849TA transistors is determined by its h FE value.

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