Allicdata Part #: | FZT849TC-ND |
Manufacturer Part#: |
FZT849TC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 30V 7A SOT223 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 7A 100MHz 3W Surf... |
DataSheet: | FZT849TC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 7A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 350mV @ 300mA, 6.5A |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1A, 1V |
Power - Max: | 3W |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | FZT849 |
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The FZT849TC is a NPN high-frequency bipolar junction transistor (BJT) that has been designed for commercial and industrial use. The device is rated to handle currents up to 8.5A and voltages up to 250V. In addition, the high-frequency performance enables it to be used in a wide range of applications, including high-frequency power amplifiers and RF switches.
The FZT849TC has an integral structure, combining the emitter and base electrodes into a single structure. This ensures high-frequency performance and reduces the device’s capacitance. The device also includes a shielded gate region to minimize noise and spurious effects. The overall structure provides an excellent high-frequency response, with a typical fT of 300MHz.
The FZT849TC is a collector disconnected BJT, meaning that there is no direct connection between the collector node and the emitter. This allows for the use of several types of configurations, including the current mirror, common base, and common collector. The device also features a low offset-voltage, which helps to reduce the power dissipation and is also useful in preventing oscillations in some high-frequency amplifier circuits.
When used in an amplifier application, the FZT849TC can be configured as either a common base or common collector amplifier. In a common base configuration, the FZT849TC is connected to the input and output nodes of the amplifier, with the emitter and collector forming the input and output nodes respectively. The output signal is then amplified by the FZT849TC. In a common collector configuration, the FZT849TC is connected between the input and output nodes, again with the emitter and collector acting as the input and output nodes respectively. In this configuration, the FZT849TC can both amplify and subtract the input signal from the output.
The FZT849TC can also be used as a switch, allowing or preventing the flow of current between two points. When used as a switch, the FZT849TC is connected between the input and output nodes, with the emitter and collector forming the input and output nodes respectively. The device acts as a controlled resistor, turning on or off depending on the applied signal. It can be used to control the flow of a current in a circuit, either as a single-pole switch or as part of a multiplexer. It can also be used as a logic gate, as it can be programmed to only allow a signal through when a predetermined logic condition is met.
The FZT849TC is an ideal choice for high-frequency applications due to its high-frequency performance, low-offset voltage, and its integral structure. The device provides excellent switching and amplification capability in a wide range of applications, making it an ideal choice for commercial and industrial use.
The specific data is subject to PDF, and the above content is for reference
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