FZT869TA Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	7A
Voltage - Collector Emitter Breakdown (Max):	25V
Vce Saturation (Max) @ Ib, Ic:	350mV @ 150mA, 6.5A
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 1A, 1V
Power - Max:	3W
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Base Part Number:	FZT869

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Introduction

FZT869TA is a NPN, high power silicon-germanium transistors with a very low saturation voltage and high gain. It is one of the most commonly used high power transistors. FZT869TA has been used frequently in a variety of applications including amplifiers, power switching and signal switching. This article will discuss the application fields and working principle of FZT869TA.

Features

FZT869TA is a high power NPN transistor with a low saturation voltage. It has a high current rating and low collector-emitter saturation voltage. The low saturation voltage reduces the power dissipation and allows higher current to be supplied by the transistor. The high current rating of FZT869TA makes it suitable for use in high power applications.

Applications

FZT869TA has been used in a variety of applications including amplifiers, power switching and signal switching. In amplifiers, FZT869TA is used as a driver for the main amplifier circuits. Its low saturation voltage and high current rating allows it to operate in high power amplifier circuits. In power switching applications, FZT869TA is used in circuits such as power FETs and high current power converters. The low saturation voltage and high current rating of FZT869TA makes it suitable for use in these applications. In signal switching applications, FZT869TA can be used as a switch for low frequency signals. Its low saturation voltage allows it to switch faster than other transistors.

Working Principle

FZT869TA is an NPN transistor which means it can only be in one of two possible states: On and Off. When the transistor is in the On state, current will flow from the collector to the emitter. When the transistor is in the Off state, no current will flow. The state of the transistor is controlled by the amount of current applied to the Base terminal. When a small current is applied to the Base terminal, a large current will flow from the Collector to the Emitter, allowing the transistor to be in the On state. When the current applied to the Base terminal is increased, the transistor will enter the Off state and no current will flow. The low saturation voltage of the FZT869TA is one of its main advantages. A low saturation voltage means that the transistor can switch faster than other transistors because the voltage drop across the transistor is lower. This reduces the power dissipation and increases the switching speed.

Conclusion

FZT869TA is a high power NPN silicon-germanium transistor with a low saturation voltage and high current rating. It is used in a variety of applications, including amplifiers, power switching and signal switching. The working principle of FZT869TA is based on the amount of current applied to the Base terminal which controls the state of the transistor. The low saturation voltage of the FZT869TA is one of its main advantages, allowing it to switch faster than other transistors and reducing power dissipation.

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