FZT855TA Discrete Semiconductor Products |
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Allicdata Part #: | FZT855TR-ND |
Manufacturer Part#: |
FZT855TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 150V 5A SOT-223 |
More Detail: | Bipolar (BJT) Transistor NPN 150V 5A 90MHz 3W Surf... |
DataSheet: | FZT855TA Datasheet/PDF |
Quantity: | 15000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 355mV @ 500mA, 5A |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1A, 5V |
Power - Max: | 3W |
Frequency - Transition: | 90MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | FZT855 |
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The FZT855TA is a general-purpose monolithic silicon NPN transistor housed in a small and inexpensive SOT223 package. Its main application fields include switching and linear amplification of signals. It has incredibly good noise suppression capabilities, which make it ideal for use in noisy environments. It is designed for use in amplifiers up to 230 mA of collector current, and it can be used in applications where frequency range is from DC to 350 MHz.
The FZT855TA operates on two different principle modes. First, the bipolar junction transistor (BJT), which utilizes three layers of doped semiconductor material to create a current gain in a single device. The three terminals are labeled base, collector, and emitter, and the current flow is controlled by the amount of current that passes through the base terminal. This current flow modulates the amount of current that passes through the collector-emitter junction. Secondly, the ohmic electrode principle which depends on the applied voltage across the device to determine the current conduction through a vacuum phenomenon similar to the photoelectric effect.
The device has a great ability to deliver high gain and power dissipation due to its advanced epitaxy technology and robust thermal stability. As a result, FZT855TA can be used in a variety of applications that require low noise and high accuracy. Its low on-resistance makes it an excellent choice for low-voltage/high-current applications, whereas its high breakdown voltage allows for use in high-voltage applications as well. Furthermore, the FZT855TA features a high degree of integration which demands less board space and simplifies the installation process.
In terms of performance, the FZT855TA has a maximum collector-emitter voltage (VCE) of 80V and an operating temperature range from -20°C to +125°C. Its DC current gain (hFE) ranges from 20-70 depending on the base current, collector current, and temperature. Furthermore, it has a collector-emitter saturation voltage of 220mV at 1mA of Ic. Additionally, it has a noise figure of 40dB at 1MHz, which makes it an excellent choice for use in audio and radio amplification applications.
The FZT855TA is an incredibly versatile device and is suitable for many applications. It is commonly used in general-purpose switching, amplifying, and boosting applications, especially in noisy environments. It can be used in power supplies, switching power amplifiers, linear amplifiers, voltage-regulated amplifiers, and audio amplifiers. Additionally, it is also used in automotive applications such as alternators, fuel injectors, and sensors.
The specific data is subject to PDF, and the above content is for reference
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