FZT948TA Discrete Semiconductor Products |
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Allicdata Part #: | FZT948TR-ND |
Manufacturer Part#: |
FZT948TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 20V 6A SOT-223 |
More Detail: | Bipolar (BJT) Transistor PNP 20V 6A 80MHz 3W Surfa... |
DataSheet: | FZT948TA Datasheet/PDF |
Quantity: | 2000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 6A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 450mV @ 250mA, 6A |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1A, 1V |
Power - Max: | 3W |
Frequency - Transition: | 80MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | FZT948 |
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The FZT948TA is a single, bipolar junction transistor manufactured by Fairchild Semiconductor. The transistor is designed for general purpose switching and amplification applications. It can be used in a variety of circuit designs, from low-frequency amplifiers to RF applications.
The FZT948TA is an NPN transistor with a maximum power dissipation of 500mW. It has a maximum collector current of 500mA and a maximum collector-base breakdown voltage of 50V. The device has a low current gain, with aminimum current gain of 10. The maximum operating temperature range is from 0°C to 150°C.
The FZT948TA is an epitaxial planar device, with a relatively small physical size allowing for it to be used in densely packed circuits. The transistor is fabricated on a silicon substrate, allowing for low profile and improved thermal transfer. It is designed to be used in most general purpose switching and amplification applications, such as input and output stages of audio amplifiers, DC and low-frequency amplifiers and high-frequency oscillators.
The working principle of the FZT948TA is based on the principle of doping, or material doping. Doping is an additive process whereby small amounts of different substances are added to a material in order to change its electrical characteristics. In this case, the transistor is doped with arsenic and phosphorus, which create a p-type and n-type semiconductor layer, respectively. This creates a "junction" between the layers, allowing electrons to flow from the n-type layer to the p-type layer. This junction is known as the "bipolar junction".
The FZT948TA is operated by applying voltage to the base of the transistor, which causes electrons to flow from the emitter to the collector. This in turn creates current flow through the transistor. This current flow is controlled by the amount of voltage applied to the base. This voltage is used to switch the transistor on and off and thus control the flow of current.
The FZT948TA can also be used in oscillator circuits, such as in RF applications. The transistor works in the same way as described above, except that the applied voltage is modulated at a certain frequency. This creates an oscillation in the current flow through the transistor, and this can be used to generate a signal at the desired frequency.
In summary, the FZT948TA is a single, bipolar junction transistor designed for general purpose switching and amplification applications. It is fabricated on a silicon substrate and is designed to have a low profile and improved thermal transfer. Its working principle is based on the principle of doping, and it is capable of being used in RF applications as an oscillator. Thus, the FZT948TA is an ideal solution for a variety of general purpose circuit designs.
The specific data is subject to PDF, and the above content is for reference
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