FZT957TA Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	300V
Vce Saturation (Max) @ Ib, Ic:	240mV @ 300mA, 1A
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 500mA, 10V
Power - Max:	3W
Frequency - Transition:	85MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Base Part Number:	FZT957

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Introduction

The FZT957TA is a single, bipolar junction transistor (BJT) designed for low power and low current applications, such as low-voltage amplifiers, small switches and switching circuits, logic drivers, and other similarly low-voltage and low-power applications. It is a small, surface-mounted device consisting of three terminals: emitter, collector, and base. The FZT957TA is a silicon NPN transistor and has a breakdown voltage of up to 35 volts.

Working Principle

Bipolar junction transistors (BJTs) are transistors that use both electrons and holes to conduct current between the emitter and collector terminals. They are a type of semiconductor device commonly used to amplify and switch electronic signals. The FZT957TA, a silicon NPN transistor, works by the movement of electrons and holes due to the electric field produced by the Base-Emitter junction. When the Base-Emitter junction is forward biased, that is, a voltage is applied from base to emitter, electrons from the emitter are attracted towards the base and holes from the collector are drawn towards the base. This creates a "narrow channel" at the base region of the transistor which conducts electrons from the emitter to the collector. When this "channel" is present, a current flows from the emitter to the collector, and the transistor is said to be "on".When the Base-Emitter junction is reverse biased, that is, a voltage is applied from emitter to base, the electric field breaks down the electron-hole pairs at the base and the pressure gradient causes them to be pushed back to their original positions. This effectively shuts off the channel and preventing the flow of current from the emitter to the collector. The transistor is said to be "off".

Application Field

Given its low power and low current levels, the FZT957TA is best used in applications that require only low voltage and low current levels. Its breakdown voltage of up to 35 volts is also ideal for certain applications.In amplifiers and logic circuits, the FZT957TA can be used to amplify or switch audio, video and logic signals. Its ability to switch on and off quickly makes it well suited to the task.In motor control circuits, the FZT957TA can be used as an ON/OFF switch. It can be used in conjunction with a snubber circuit to limit the voltage that is applied across the motor.The FZT957TA can also be used for small switches, such as those used to activate small lights or control small motors. The low power and low current levels are ideal for such applications.

Conclusion

The FZT957TA is a single, bipolar junction transistor (BJT) designed for low power and low current applications. It works by the movement of electrons and holes due to the electric field produced by the Base-Emitter junction. It is ideal for applications that require low voltage and low current levels, such as amplifiers and logic circuits, motor control circuits, and small switches.

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