FZT953TA Discrete Semiconductor Products

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The FZT953TA is a type of bipolar junction transistor (BJT), or a three-terminal semiconductor device, specifically a NPN oscillator transistor. It is made and sold by Fairchild Semiconductor, an American semiconductor company specializing in the manufacturing and sale of discrete semiconductors and integrated circuits of both the passive and active varieties. The FZT953TA is designed to operate in high frequency and high power applications, specifically those applications requiring an oscillator, such as oscillator circuits, clock signals, modulator/demodulator circuits, and similar types of circuits.

The FZT953TA is constructed as a standard transistor, with an emitter, base, and collector. It was designed to accept a voltage of 12 volts and can support a maximum junction temperature of up to 150 degrees Celsius. Its maximum collector current and base current are 50 milliamps, while its total collector dissipation and total power dissipation are 1,500 milliwatts and 450 milliwatts, respectively. Moreover, the FZT953TA\'s collector-to-emitter breakdown voltage and base-emitter breakdown voltage are given as 30 volts, and 6.0 volts, respectively. Additionally, its junction capacitance, FT and fT are provided as 270/90/50 MHz, respectively.

In terms of its working principle, the FZT953TA operates similarly to any other BJT. Charge carriers, either electrons or holes, are injected into the base terminal, causing them to accumulate at the base-collector junction, thereby creating a forward-biased junction. This accumulation of charge at the junction lowers the potential barrier between the collector and base, allowing the carriers to move from the base to the collector, creating a current flow from the emitter towards the collector in the circuit.

This flow of current between the emitter and collector creates a voltage difference across the base-collector p-n junction, and results in a depletion layer forming at the junction. This layer increases the junction\'s resistance and further restricts the flow of current. As a result, the current flow tends to shut down completely at some point, and the transistor acts as an “open” switch - in other words, no current will flow through it. When the switch is “on,” the depletion layer at the junction reduces, enabling current to flow from the collector to the emitter, as desired. The current flow from the base to the collector can also be controlled by varying the base current.

Given its tight specifications and careful design, the FZT953TA is an excellent choice for high frequency and high power applications, and its ability to act as an open switch and start and stop current flow make it ideal for such uses. The transistor\'s low breakdown voltages and the high frequency response of its collector-emitter junction make it even more suitable for such applications. As such, the FZT953TA is a useful and powerful transistor for a wide range of high frequency and high power applications.

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