FZT951TA Allicdata Electronics

FZT951TA Discrete Semiconductor Products

Allicdata Part #:

FZT951TR-ND

Manufacturer Part#:

FZT951TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 60V 5A SOT-223
More Detail: Bipolar (BJT) Transistor PNP 60V 5A 120MHz 3W Surf...
DataSheet: FZT951TA datasheetFZT951TA Datasheet/PDF
Quantity: 7000
Stock 7000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 460mV @ 500mA, 5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Power - Max: 3W
Frequency - Transition: 120MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: FZT951
Description

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The FZT951TA is a PNP BJT (Bipolar Junction Transistor), specifically designed for high-speed switching applications. It is a three-terminal device containing an emitter, a base, and a collector. These three terminals serve as the main elements of an electronic circuit, allowing current to flow in either direction when the voltage applied to the base-emitter junction is of sufficient magnitude. PNP BJTs are known for using a current-polarity reverse to the one used in NPN BJTs, and the FZT951TA is no exception in this aspect.

The FZT951TA offers several advantages over other types of transistors, such as high-speed switching with a current gain of up to 300. This high current gain means that the output current is much larger than the input current, allowing for a greater range of applications. This high current gain also allows for effective use of smaller transistors, which in turn reduces the amount of space required for a circuit. In addition, the FZT951TA also features a low collector-emitter saturation voltage, meaning that it is able to provide an even greater range for current switching in complex circuits. Its low collector-emitter saturation voltage also allows the FZT951TA to operate at much higher speeds than other types of transistors, making it suitable for use in faster circuits.

The FZT951TA is also capable of operating at high current ratings compared to other transistors. It is capable of handling up to 0.5A of current and has a maximum collector-emitter voltage rating of 60V. This makes it suitable for use in wide variety of applications such as switching regulators, converters, inverters, amplifiers and motor control.

Due to its wide variety of applications, the FZT951TA often comes in a package that includes both the bipolar junction transistor and its complementary device, the FZT950T (the N-type Bipolar junction transistor). This makes it a perfect choice for applications requiring both PNP and NPN BJTs. It can also be used in circuits that require only one type of transistor, as it can switch both positive and negative currents.

The working principle of a PNP BJT is fairly simple. When a low voltage is applied to the base-emitter junction, it allows current to flow between the emitter and the collector. This current flow causes a proportional voltage drop across the base-emitter junction, which in turn increases the current flowing between the collector and the emitter. This amplified current enables the FZT951TA to operate in its intended applications.

In conclusion, the FZT951TA is a highly capable PNP BJT designed for high-speed switching applications. It is well suited for use in a variety of applications due to its high current gain, low saturation voltage, and its ability to operate at high current ratings. The FZT951TA\'s working principle is also simple, making it perfect for use in complex circuits.

The specific data is subject to PDF, and the above content is for reference

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