GD25LQ16CSIG Allicdata Electronics
Allicdata Part #:

GD25LQ16CSIG-ND

Manufacturer Part#:

GD25LQ16CSIG

Price: $ 0.34
Product Category:

Integrated Circuits (ICs)

Manufacturer: GigaDevice Semiconductor (HK) Limited
Short Description: NOR FLASH
More Detail: FLASH - NOR Memory IC 16Mb (2M x 8) SPI - Quad I/O...
DataSheet: GD25LQ16CSIG datasheetGD25LQ16CSIG Datasheet/PDF
Quantity: 1000
9500 +: $ 0.30125
Stock 1000Can Ship Immediately
$ 0.34
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mb (2M x 8)
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O
Voltage - Supply: 1.65 V ~ 2.1 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOP
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

GD25LQ16CSIG is a Socket memory device manufactured by GigaDevice Semiconductor Inc. It is a low-power, high-speed Flash memory device that integrates a 3 Volt interface controller and a configurable 1,048,576 byte storage array. It is mainly suitable for use in embedded applications such as low-power consumer electronic devices, and features an enhanced, wide operating temperature range.

The GD25LQ16CSIG is compatible with the SPI and Serial Flash standards, but it also offers optional data protection solutions that provide reliable operation in extreme temperature and humidity environments. It has a wide range of application fields, from industrial and medical devices to consumer electronics and automotive systems.

The working principle of GD25LQ16CSIG is based on the concept of non-volatile memory. Non-volatile memory is a type of memory that retains its content even if power is removed. It is widely used in the storage industry and is becoming increasingly important in the field of microelectronics. The GD25LQ16CSIG consists of a logic array built around a memory array, which consists of four 16 Mbit memory cells.

The memory array is organized into 1,048,576 bytes of non-volatile memory and is divided into 16 Mbit sectors. Each sector contains four sub-sectors, which are composed of 512 bytes each. The four 16 Mbit memory cells are connected to the logic array via a serial interface, and the logic array is used to control the read/write operations on the memory array.

The GD25LQ16CSIG also features enhanced data protection features, such as Uniform Sector Erase (USE) and Multi-Sector Erase (MSE). USE provides a single-step operation, allowing erasure of all four sub-sectors in a single operation. MSE provides multi-step erasure operations, which allows the user to erase specific sub-sectors within the same sector. It also features a low-voltage capability, which is important when the device is used in battery-powered or low-power applications.

The GD25LQ16CSIG is designed with a 3V/1.8V supply voltage feature, which helps reduce power consumption, extend operating temperature range, and increase reliability. Additionally, it also features an integrated 8-bit CRC (Cyclic Redundancy Check) for data integrity, as well as an SPI protection feature that prevents unauthorized access to the device.

Overall, the GD25LQ16CSIG is a highly reliable and versatile memory device. It is designed to provide reliable non-volatile memory performance in a wide range of applications, from low-power embedded systems to automotive and industrial designs. With its enhanced data protection features, wide temperature range, and low power requirements, it is an ideal choice for use in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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