GD25LD20COIGR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	2Mb (256K x 8)
Clock Frequency:	50MHz
Write Cycle Time - Word, Page:	97µs, 6ms
Memory Interface:	SPI - Dual I/O
Voltage - Supply:	1.65 V ~ 2 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount

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Introduction

The GD25LD20COIGR is a two-dimensional non-volatile memory device developed by GigaDevice Semiconductor. The device is an extension of traditional flash memory, offering increased write performance, lower cost and higher endurance. This memory has become increasingly popular with the emergence of new applications which require higher levels of performance, while keeping cost and power consumption in check. In this article, I will discuss the application field of GD25LD20COIGR and its working principle.

Application Field

GD25LD20COIGR is a type of non-volatile memory, suitable for a wide range of applications such as storing code, building up databases and data logging. This type of memory is especially useful in applications where space is limited, since it is much smaller than traditional storage technologies and offers a higher storage density than standard NOR Flash memories. The GD25LD20COIGR also serves as an ideal solution for smaller form factor devices such as smartphones, tablets, PDAs and embedded systems which usually requires a high-efficiency, reliable and robust non-volatile memory.In addition, this device can be used in a wide range of data security applications. Its high endurance feature gives it a major advantage over other non-volatile memory solutions. The device is also complimented with a strong security mechanism and secure memory protection which makes it a suitable choice for storing protected data.

Working Principle

The GD25LD20COIGR works by using an array of cells arranged in a rectangular array. Each cell consists of two subcells, an Cell Array Read/Write Subcell (CARW Subcell) and an Array Read/Write Subcell (ARW Subcell). The CARW Subcell stores the data, while the ARW Subcell stores a reference value that is used by the device to verify the correctness of the data stored in the CARW Subcell.The device is designed to accumulate charge in the ARW Subcell which allows for higher endurance than other non-volatile memory solutions. This accumulated charge is then released to the CARW Subcell allowing for data restoration if necessary. Additionally, the GD25LD20COIGR is a reprogrammable device which means that data can be overwritten, while still maintaining a high level of integrity. This feature can be of great benefit in applications where data needs to be updated or modified frequently.

Conclusion

The GD25LD20COIGR is a highly versatile two-dimensional non-volatile memory device developed by GigaDevice Semiconductor. It is widely used in small form factor applications such as smartphones, tablets and embedded systems. The device offers faster write performance, lower cost and higher endurance than traditional flash memories. Furthermore, its high endurance and secure memory protection makes it an ideal choice for data security applications. Hope the above article has helped to give a better understanding of the application field and working principle of the GD25LD20COIGR.

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