GD25VE20CTIG Allicdata Electronics
Allicdata Part #:

GD25VE20CTIG-ND

Manufacturer Part#:

GD25VE20CTIG

Price: $ 0.22
Product Category:

Integrated Circuits (ICs)

Manufacturer: GigaDevice Semiconductor (HK) Limited
Short Description: NOR FLASH
More Detail: FLASH - NOR Memory IC 2Mb (256K x 8) SPI - Quad I/...
DataSheet: GD25VE20CTIG datasheetGD25VE20CTIG Datasheet/PDF
Quantity: 1000
20000 +: $ 0.20304
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Mb (256K x 8)
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI - Quad I/O
Voltage - Supply: 2.1 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Description

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The GD25VE20CTIG (also known as VE2), is a kind of solid-state semiconductor memory, which allows for large capacity, low power, and fast access times. It is mainly used in various computer-related applications, such as laptops, server-based applications, embedded systems, and flash memory cards.The GD25VE20CTIG utilizes a 20nm-shrink, low voltage technology and a total of 2Gbits of memory. Single transistor NAND flash memory technology is used, with cells that are 1 or 2 bits in size (1-bit or 2-bit cells). The memory can be organized in to two different types of structures, depending on the application: page-oriented or block-oriented structures.The page-oriented structure provides faster read access time, since data is read from a single page. The data structure is organized in to pages, and a single bit of data can be read from a single page, without the need to read the entire memory block. The block-oriented structure provides faster write times, since all of the data within a rectangular unit (the block) can be written at once.The GD25VE20CTIG uses a NOR architecture, meaning that data is organized in to blocks and written in blocks (flash-oriented programming). This allows for the storage of data in a more compact form, making it faster and more efficient than other designs.The device consists of two parts: a controller that takes care of the memory organization, and a memory array that contains the memory cells. The memory array consists of two types of memory cells: NOR cells and NAND cells.The NOR cells are used for storage, and the NAND cells are used for erasing and programming. When a write operation is performed, the data is written to the memory array and then read back for verification. After verification, the memory is erased and the data is written again. The advantage of using NOR and NAND cells is that less power is needed to program and erase the memory compared to other designs.The GD25VE20CTIG is ideal for applications that require high speed, low power memory, such as embedded systems and mobile devices. The device is also useful in application that require large capacity, such as digital music players and cameras. The memory structure allows for easy integration into different system designs, resulting in faster data access times.

The specific data is subject to PDF, and the above content is for reference

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