GD25VQ20CTIGR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	2Mb (256K x 8)
Clock Frequency:	104MHz
Write Cycle Time - Word, Page:	50µs, 3ms
Memory Interface:	SPI - Quad I/O
Voltage - Supply:	2.3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOP

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GD25VQ20CTIGR Memory

Introduction to GD25VQ20CTIGR Memory

The GD25VQ20CTIGR is an advanced, high-density 25V wafer-level chip (WLCSP) FeRAM (Ferroelectric Random Access Memory) that offers excellent performance and reliability in memory and storage applications. This FeRAM device provides a 2Mb capacity of non-volatile memory, and is suitable for applications requiring high-speed data read/write and low power consumption. The single-chip memory device is available in 9-ball 1.0x1.0 mm WLCSP packages, and is suitable for use in small form-factor and wearable devices, embedded memory, and distributed memory applications.

GD25VQ20CTIGR Working Principle

The GD25VQ20CTIGR is an FeRAM (Ferroelectric Random Access Memory). Unlike other forms of RAM, such as SRAM or DRAM, FeRAM is non-volatile, meaning that it retains its contents even when the power is turned off. This makes it an ideal choice for applications that require high reliability, such as security and medical devices.In order to understand how FeRAM works, it is helpful to first understand the basic principles of ferroelectricity. A ferroelectric material contains electric dipoles which can be switched between two states of alignment by applying an electric field. The GD25VQ20CTIGR FeRAM is able to take advantage of this property to store charge on a ferroelectric layer as it moves between two or more alternate dipole arrangements.The GD25VQ20CTIGR FeRAM device is comprised of two major layers: a non-volatile ferroelectric memory layer and a read/write circuitry layer. The read/write circuitry layer consists of transistors, capacitors and other devices that control the flow of charge and allow for access to the memory storage layer. The non-volatile memory layer is composed of a ferroelectric material which is able to store charge and recall it when a voltage is applied.The process of writing to the GD25VQ20CTIGR FeRAM involves applying a voltage between two terminals. This voltage causes a shift in the polarity of the ferroelectric material, which stores charge and reflects the written state. To read the memory, the read circuitry senses the polarity of the feroelectric layer, and based on this, determines the stored information.

GD25VQ20CTIGR Application Field

The GD25VQ20CTIGR is an excellent choice for applications requiring a combination of high performance and low power consumption in a small form-factor. As such, this FeRAM device is suitable for a wide range of embedded memory and storage applications, including:

• Embedded industrial and automotive systems
• Wearable devices and other personal electronics
• Medical and security systems
• Distributed memory and storage systems

The GD25VQ20CTIGR is an excellent choice for applications that require a high level of reliability and low power consumption. The 2Mb capacity of non-volatile memory makes it versatile, while the small form-factor WLCSP packages make it suitable for use in small and wearable devices. This FeRAM device is ideal for a wide range of embedded memory and storage applications and is an excellent choice for designers looking for high performance and reliability.

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