GD25LQ16CWIGR Allicdata Electronics
Allicdata Part #:

GD25LQ16CWIGR-ND

Manufacturer Part#:

GD25LQ16CWIGR

Price: $ 0.41
Product Category:

Integrated Circuits (ICs)

Manufacturer: GigaDevice Semiconductor (HK) Limited
Short Description: NOR FLASH
More Detail: FLASH - NOR Memory IC 16Mb (2M x 8) SPI - Quad I/O...
DataSheet: GD25LQ16CWIGR datasheetGD25LQ16CWIGR Datasheet/PDF
Quantity: 1000
6000 +: $ 0.36580
Stock 1000Can Ship Immediately
$ 0.41
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mb (2M x 8)
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 50µs, 2.4ms
Memory Interface: SPI - Quad I/O
Voltage - Supply: 1.65 V ~ 2.1 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Description

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The GD25LQ16CWIGR is a memory device from a family of non-volatile Flash memory that includes Serial Peripheral Interface (SPI), Dual/Quad SPI and Quad I/O interface Flash memory. This memory device features a user-programmable memory controller that features a configuration setup, real time write protection and secure erase/program cycling. The GD25LQ16CWIGR offers a wide range of uses, from portable data storage to embedded applications.

Application Field

The GD25LQ16CWIGR memory device is used in many applications ranging from data storage to embedded systems. Its most common applications include:

  • Data storage, either as a full-capacity portable storage device or as a smaller embedded storage solution;
  • Computer peripherals such as USB flash drives, card readers, and other data storage solutions;
  • Industrial motor control;
  • Medical equipment; and
  • Consumer electronics.

Working Principle

The working principle of the GD25LQ16CWIGR memory device is based on the non-volatile Flash memory technology. The memory device uses an internal array of non-volatile transistors to store data. This array is then programmed and erased using an electrostatic charge.

The programming process works by applying electrical pulsewidth modulation (PWM) to the array of non-volatile transistors. This PWM pulses then, depending on their width and timing, create either a logic 1 (a set state, which corresponds to a charge) or a logic 0 (a reset state, which corresponds to a discharge). The programming process is then repeated until all the programming of the array of transistors is complete.

TheGD25LQ16CWIGR memory device also offers a secure erase and program cycling. This feature allows the user to erase the entire memory array while ensuring any ensuing programming of the memory array will be consistent with the user’s requirements.

In addition to the array of memory transistors, the GD25LQ16CWIGR also contains programmable circuitry and an 8 bit microcontroller. This circuitry and microcontroller in unison offer the added features of real-time write protection, an integrated voltage regulator and a configuration set up.

To conclude, the GD25LQ16CWIGR memory device offers a versatile and secure non-volatile Flash memory solution. With applications in data storage, computer peripherals, industrial motor control, medical equipment and consumer electronics, the GD25LQ16CWIGR memory device is an effective memory device.

The specific data is subject to PDF, and the above content is for reference

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