GD25WD05CEIGR Allicdata Electronics
Allicdata Part #:

1970-1069-2-ND

Manufacturer Part#:

GD25WD05CEIGR

Price: $ 0.22
Product Category:

Integrated Circuits (ICs)

Manufacturer: GigaDevice Semiconductor (HK) Limited
Short Description: NOR FLASH
More Detail: FLASH - NOR Memory IC 512Kb (64K x 8) SPI - Quad I...
DataSheet: GD25WD05CEIGR datasheetGD25WD05CEIGR Datasheet/PDF
Quantity: 1000
3000 +: $ 0.20657
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Kb (64K x 8)
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI - Quad I/O
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-XFDFN Exposed Pad
Supplier Device Package: 8-USON (2x3)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

GD25WD05CEIGR is an advanced model of non-volatile serial EEPROM memory. It belongs to the category of Memory and can be widely applied in storage solutions, such as information storage of set-top boxes and home appliances. Meanwhile, it can also be used in addressable memory applications, such as addressable switches, smart card readers and telephone systems.

GD25WD05CEIGR memory is a 5-volt non-volatile memory device. It adopts a 4096-bit cascaded serial EEPROM as the main storage unit. Its storage capacity is split into 1024 storage pages, each page having 32 levels of bits. Each page can be separately stored and erased, thus each page takes a different process time.

The EEPROM can maintain the stored data for up to 10 years, or about 30 years for write cycles. The device can operate at either 3.3 volts or 5 volts, thus meeting the requirements of a variety of applications. In addition, the EEPROM can be programmed to operate in a number of different modes. These include auto-wake-up, refresh, write and store functions. The refresh and auto-wake-up modes can significantly improve the overall system performance.

The working principle of GD25WD05CEIGR memory is based on the Charge Trapping Technology. This technology involves the injection of electric charges into the crystalline silicon of the system. These charges are then stored in a layer of trap structures above the transistor gates. This prevents the electric charges from dissipating, allowing for non-volatile operation with extended life time. In addition, the device is also protected with built-in ECC checks to ensure data accuracy.

The GD25WD05CEIGR memory combines the advantages of both serial EEPROM and non-volatile memory, making it a reliable and cost-effective solution for many storage applications. In addition, its flexible storage capabilities, wide voltage operating range and extended life time make it suitable for various embedded system applications.

In summary, GD25WD05CEIGR memory is a reliable and high-performance non-volatile serial EEPROM that is perfect for many storage applications. With its combination of advanced storage technologies, extended life time and wide operating range, it is an ideal device for embedded system applications.

The specific data is subject to PDF, and the above content is for reference

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