GDZ3V0B-E3-18

Diodes - Zener - Single - GDZ3V0B-E3-18 Application Field and Working Principle

The GDZ3V0B-E3-18 is a single Zener diode produced by Vishay Semiconductor. It is a highly efficient device primarily designed for use in a wide range of electronic applications, including as part of an electrical circuit for over-voltage protection. This device can be used as part of an integrated circuitry in multiple industries and applications including but not limited to automotive, medical, industrial and consumer electronics. In addition, the product provides excellent overload protection while having extremely low conduction losses.

Design and Construction

The GDZ3V0B-E3-18 is housed in a 2-pin TO-92 (Thin Small Outline Package) case. This design features leads that are inserted into slots that are regularly spaced along the circumference of the housing. The leads are used as the electrical contact points that provide the current connections required for diode operation. The device also has a flange mounted to the package which acts as a mounting or support.

The device is composed of a pair of P-type and N-type semiconductor layers that are stacked together. These layers form what is known as the P-N junction. The P-N junction is an interface between the two semiconductor layers where the N-type material has an excess of free electrons and the P-Type material has a deficit of electrons. This creates an electrical potential between the two layers.

Operation

The way the GDZ3V0B-E3-18 functions is determined by the characteristics of the P-N junction. When a voltage is applied in the forward direction, the junction behaves as a resistor. If a higher voltage is applied in the opposite direction, the junction will then behave as a diode and will breakdown at a predetermined voltage. This breakdown voltage is known as the Zener voltage and is determined by the dimensions of the P-N junction and doping characteristics of the semiconductor material.

The Zener breakdown voltage of the GDZ3V0B-E3-18 is 3 volts. This means that the device will start to break down at voltages greater than 3 volts and it will start to regulate the current flow that passes through it. This regulating property makes it a suitable component for controlling the circuit in over-voltage protection applications. This component gives protection against transients or high-voltage shutdowns.

Other Characteristics

The GDZ3V0B-E3-18 has a maximum power dissipation of 500 mW, maximum DC reference voltage range of 1.3−3 V, maximum reverse current of 5 µA, and a maximum forward current of 1.2 A. This device requires no external components other than the power supply and is not affected by temperature differences. It has a high reliability factor and is capable of withstanding high temperatures. Furthermore, the GDZ3V0B-E3-18 is RoHS compliant and can be used in automotive, medical, industrial and consumer electronics applications.