GDZ3V0B-HE3-18 Allicdata Electronics
Allicdata Part #:

GDZ3V0B-HE3-18-ND

Manufacturer Part#:

GDZ3V0B-HE3-18

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 3V 200MW SOD323
More Detail: Zener Diode 3V 200mW ±4% Surface Mount SOD-323
DataSheet: GDZ3V0B-HE3-18 datasheetGDZ3V0B-HE3-18 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02362
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 3V
Tolerance: ±4%
Power - Max: 200mW
Impedance (Max) (Zzt): 120 Ohms
Current - Reverse Leakage @ Vr: 50µA @ 1V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Description

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The GDZ3V0B-HE3-18 is one of the most common single Zener diodes available and is suitable for use in a variety of applications. The diode is a single Zener diode with a voltage rating of 3V and a power dissipation of 0.2W. It features a wide operating temperature range, a fast recovery time, low leakage current, and a low capacitance.

The GDZ3V0B-HE3-18 is mainly used in PFC switching circuits, DC-DC converter circuits, battery protection circuits, voltage regulator circuits, and load regulation systems. It is also used in the design and development of medical equipment, automotive electronics, LED lighting, and more. It provides superior performance over conventional silicon diodes in terms of speed, precision, noise reduction, and low operating temperature.

The GDZ3V0B-HE3-18 is a high-performance, low-temperature device with a wide operating temperature range from -55°C to 200°C. It is a type of low reverse leakage diode, capable of blocking reverse currents from reaching levels that could damage connected components or the circuit. It can also be used in series with other diodes if needed, as it has an exceptionally low capacitance of about 0.2pF.

The working principle of the GDZ3V0B-HE3-18 is based on the PN junction. When a voltage is applied across the device above the zener breakdown voltage, it begins to conduct in reverse, allowing a small current to flow. This reverse bias current decreases as the applied voltage reaches the zener voltage. The device then limits the voltage across it to the stated breakdown voltage, which can be seen from its name.

This diode is very reliable, with a long life expectancy and high temperature operation. In addition, it can be used in a variety of situations, including high switching frequency circuits, low voltage drop applications, and high-efficiency circuits. Additionally, it is RoHS compliant, making it suitable for a wide range of applications.

Overall, the GDZ3V0B-HE3-18 is a single Zener diode with a wide operating temperature range and many features that make it suitable for a variety of applications. It has a low reverse leakage current and a low capacitance, and is suitable for use in high frequency switching circuits, low voltage drop applications, and high-efficiency circuits. The working principle of the device is based on the PN junction, and it limits the voltage across it to the stated breakdown voltage. The device is also RoHS compliant and has a long life expectancy.

The specific data is subject to PDF, and the above content is for reference

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