GDZ3V0B-HE3-08

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	3V
Tolerance:	±4%
Power - Max:	200mW
Impedance (Max) (Zzt):	120 Ohms
Current - Reverse Leakage @ Vr:	50µA @ 1V
Operating Temperature:	-55°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	SC-76, SOD-323
Supplier Device Package:	SOD-323

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Introduction

The GDZ3V0B-HE3-08 is a single Zener diode from Taiwan Semiconductor. It is a Schottky-type diode with a low capacitance, making it ideal for applications where a high performance solution is required. The device features a reverse voltage rating of 3V, a maximum reverse current of 8mA, and a power dissipation rating of 1W.

Application Field and Working Principle

GDZ3V0B-HE3-08 Zener diodes are used for a range of applications. The most common use for such a diode is in voltage regulation, where the diode acts as a constant voltage source, therefore maintaining a regulated output signal with a minimum of fluctuations. This is especially useful in applications such as power supplies and voltage regulators, where a constant voltage is important for the correct operation of the device.Zener diodes also find use in signal conditioning and signal isolation, where they act as protection elements against inductive and capacitive transients. The GDZ3V0B-HE3-08\'s low capacitance design makes it well suited for use in these applications.The working principle of a Zener diode is relatively simple. The diode behaves like a normal diode when operated in forward bias, wherein the current through the diode depends on the applied voltage, with the diode becoming more conductive as the applied voltage is increased. However, when operated in reverse bias and the applied voltage becomes equal to the Zener voltage, the diode will become increasingly conductive and the voltage across the diode will become more or less constant. This reverse breakdown mechanism is exploited for the Zener diode\'s practical application for voltage regulation.

Advantages and Limitations

The GDZ3V0B-HE3-08 benefits from a range of advantages when compared with other diodes. The main advantage is its low capacitance, which allows for high performance and low noise. Its low reverse current rating prevents it from constructing voltages higher than the Zener voltage when in reverse bias. The device also has a wide temperature range, meaning that it can be used in a variety of conditions with varying temperatures.However, the device also has some limitations in comparison to other diodes. Its failure rate is higher than other diodes, meaning that it is not suitable for high volume applications where reliability is key. Additionally, its maximum power dissipation rating is only 1W, meaning that it cannot handle large power loads.

Conclusion

The GDZ3V0B-HE3-08 is a single Zener diode from Taiwan Semiconductor. It is a Schottky-type diode with a low capacitance, making it ideal for applications where a high performance solution is required. The device is used for a range of applications, most notably voltage regulation and signal condition, and it benefits from a range of advantages such as a low capacitance and high performance. However, the device also has some limitations, such as a high failure rate and a low power rating.

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