GDZ3V9B-G3-08

The GDZ3V9B-G3-08 is a single Zener diode which provides a voltage reference to various applications. It is a three-terminal semiconductor device typically used to regulate voltage in a circuit. It is a SOD123F package type

Application Field

The GDZ3V9B-G3-08 can be used in many different applications. It can be used for voltage stabilization, voltage regulation, overvoltage protection, overvoltage transient protection, and frequency stabilization. Common applications include precision voltage references for electronics, microelectronics, and automotive electronics.

Working Principle

The GDZ3V9B-G3-08 is a three-terminal device that functions as a voltage regulator. It has a long life span and a high level of stability. The working principle of this zener diode is based on the doping process, which is the introduction of impurities into a semiconducting material. This process allows for the modification of the material’s electrical properties, allowing the device to act as a voltage regulator. The dopant elements are distributed in such a way that they form a PN junction, which when exposed to an anode or repelling electrical field will create a special conductive flow of electrons by an avalanche breakdown.

The voltage breakdown of the GDZ3V9B-G3-08 occurs when the static electric field generated by a potential difference between the cathode and anode exceeds the Zener breakdown voltage that can be written as E = Vz/d, where E is the electric field, Vz is the Zener breakdown voltage and d is the thickness of the depletion region.

In order to maintain the voltage constant, the device should be used in conjunction with a resistor in order to limit the current. This allows for the voltage to remain constant by limiting the current flow through the diode.