GSOT08C-HE3-18 Allicdata Electronics
Allicdata Part #:

GSOT08C-HE3-18-ND

Manufacturer Part#:

GSOT08C-HE3-18

Price: $ 0.06
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 8V 19.2V SOT23
More Detail: N/A
DataSheet: GSOT08C-HE3-18 datasheetGSOT08C-HE3-18 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
10000 +: $ 0.05383
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Voltage - Clamping (Max) @ Ipp: 19.2V
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 160pF @ 1MHz
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 345W
Current - Peak Pulse (10/1000µs): 18A (8/20µs)
Series: Automotive, AEC-Q101
Voltage - Breakdown (Min): 9V
Voltage - Reverse Standoff (Typ): 8V (Max)
Unidirectional Channels: 2
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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A TVS - Diode is an electronic electrical component used to protect sensitive electronic devices from electrical surges. The GSOT08C-HE3-18 is one type of TVS Diode that is designed to provide protection at high frequencies. It offers an industry-leading protection capability of a maximum peak pulse current of 400A and can handle a DC overvoltage of up to 18V.

The GSOT08C-HE3-18 is suitable for a wide variety of applications, from telecom and networking applications to industrial control systems and automotive displays. Its maximum leakage current can be as low as 0.1 µA and its capacitance is only 9 pF, enabling it to respond quickly to overvoltage spikes. Moreover, the diode has a wide operating temperature range, from -40 ºC to +125 ºC.

The GSOT08C-HE3-18 works by using a breakdown voltage of 18V and a maximum peak pulse current of 400A when electrical current exceeds its threshold protection level. The diode will be triggered when a surge voltage is applied to one of its chips, and it will clamp the voltage to a safe value. This will in turn protect the microcontroller, field-programmable gate array (FPGA), or system-on-chip (SoC) that is connected to the diode’s output.

When the surge voltage is applied, electrons in the diode become highly mobile and are free to move up and down between two adjacent metal-oxide-semiconductor (MOS) junctions. This permits sudden expansion and contraction of the current to flow in either direction. This increases the capacitance and as a result, ESD (electrostatic discharge) protection is achieved. The GSOT08C-HE3-18 clamping action will also reduce EMI (electromagnetic interference), which can cause data loss or system flaws.

In addition to protection from overvoltage spikes, the GSOT08C-HE3-18 can also be used to protect a system from ESD. The diode’s capacitance increases when static electricity is applied to it, allowing the current to be quickly discharged, preventing damage to sensitive components. The diode can also protect against lightning strikes as it can withstand a maximum peak pulse current of 400A.

The GSOT08C-HE3-18 is a reliable and cost-effective protection solution for sensitive electronic systems and components. It can provide efficient ESD and overvoltage protection while having a wide operating temperature range. Moreover, its low leakage current and low capacitance properties make it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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