HBAT-5400-TR1 Allicdata Electronics
Allicdata Part #:

HBAT-5400-TR1-ND

Manufacturer Part#:

HBAT-5400-TR1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE SCHOTTKY 30V 220MA SOT-23
More Detail: RF Diode Schottky - Single 30V 220mA 250mW SOT-23-...
DataSheet: HBAT-5400-TR1 datasheetHBAT-5400-TR1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky - Single
Voltage - Peak Reverse (Max): 30V
Current - Max: 220mA
Capacitance @ Vr, F: --
Resistance @ If, F: --
Power Dissipation (Max): 250mW
Operating Temperature: 150°C (TJ)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: HBAT-5400
Description

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Diodes, also referred to as \'rectifiers\', are a type of electrical component that allow electricity to flow in only one direction. They are used in a variety of electronics applications such as radio frequency (RF) circuitry. The HBAT-5400-TR1 diode is an RF diode specifically designed to operate in very high frequencies. In this article, we will look at the application field and working principle of this diode.

The HBAT-5400-TR1 diode is a type of Schottky diode developed for the Amateur Radio market. It is designed for use in RF circuits, such as amplifiers and oscillators, where fast switching and low capacitance are essential. It has a low-noise design and can operate up to 40 GHz, making it suitable for use in Ultra-Wideband (UWB) applications.

The main application field for this diode is in Amateur Radio, allowing radio enthusiasts to build their own circuits. It is also used in commercial radio systems, such as transmission and broadcast systems, and in wireless communications networks, as well as in other RF applications such as in RADAR, SATCOM and Wi-Fi systems.

The working principle of this Schottky diode is based on the ‘Schottky effect’, which is a phenomenon where the presence of an electric current results in a non-uniform distribution of charges near the interface between two different materials. In this diode, the two materials used are a p-type semiconductor and a metal-oxide-semiconductor (MOS) gate.

When a positive voltage is applied to the p-type semiconductor, at the interface between the p-type semiconductor and the MOS gate, electrons get ‘trapped’, while positively charged holes move towards the MOS gate. This creates a negative potential region at the interface, which prevents the further flow of electrons. This, effectively, blocks any current flowing through the diode in the reverse direction.

On the other hand, when a negative voltage is applied to the p-type semiconductor, the trapped electrons and holes cause the negative potential region to disappear. This allows the electrons to move freely in the forward direction, resulting in a current flowing through the diode. The diode, therefore, only allows the current to flow in one direction, which is known as its rectifying effect.

The HBAT-5400-TR1 diode, with its low-noise and high-frequency compatibility, is becoming increasingly popular for use in radio circuits and applications. Its high-frequency operation makes it suitable for UWB systems, while its low-noise design makes it ideal for Amateur Radio circuits. Its ability to rectify current also makes it suitable for use in other applications such as RADAR systems, SATCOM systems and Wi-Fi networks.

The specific data is subject to PDF, and the above content is for reference

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