Allicdata Part #: | HBAT-540B-TR2G-ND |
Manufacturer Part#: |
HBAT-540B-TR2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | DIODE SCHOTTKY 30V 430MA SOT-323 |
More Detail: | RF Diode Schottky - Single 30V 430mA 825mW SOT-323 |
DataSheet: | HBAT-540B-TR2G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky - Single |
Voltage - Peak Reverse (Max): | 30V |
Current - Max: | 430mA |
Capacitance @ Vr, F: | -- |
Resistance @ If, F: | -- |
Power Dissipation (Max): | 825mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
Base Part Number: | HBAT-540 |
Description
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Introduction of HBAT-540B-TR2G Device
HBAT-540B-TR2G is a Diodes - RF device that is widely used for various applications. It is a small size device with the voltage rating of 800 V and the current rating of 1 A. The device has a wide range of operating temperatures from -40°C to +135°C. The device features a wide frequency range and is suitable for use in high-speed transmission due to its fast ON/OFF switching capability. The device is also highly reliable and is designed to withstand harsh environmental conditions.Applications of HBAT-540B-TR2G Device
The HBAT-540B-TR2G device is widely used in a variety of electronic applications. These include data transmission, radio frequency (RF) direct current (DC) switching, DC to DC switching, high voltage power conversion and high power RF amplification. Other applications include RF oscillators and flow control technology. Due to its small size and high switching capability, the device is also used in many consumer and industrial applications.Working Principle of HBAT-540B-TR2G Device
The working principle of the HBAT-540B-TR2G device is based on a diode bridge configuration. When the input voltage is applied, the diode bridge allows current to flow from the positive to the negative terminal, forming a bridge circuit. This bridge circuit acts as a buffer for the load and prevents over current in the circuit. The device has its own reverse leakage current, which ensures that the current does not exceed the ratings of the device.The device also possesses a fast switching speed, which is useful in high-speed data transmission. The device is also designed to reduce voltage drop in the circuit, ensuring efficient operation. Additionally, the device can be used in RF applications due to its wide frequency range and low parasitic capacitance.In summary, the HBAT-540B-TR2G device is a reliable and efficient Diodes - RF device that is suitable for a wide range of applications. Its small size and fast switching speed make it an ideal choice for consumer and industrial applications. The device is highly reliable and can withstand harsh environmental conditions. It is also designed to reduce voltage drop in the circuit, therefore providing efficient operation.The specific data is subject to PDF, and the above content is for reference
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