HBAT-5402-TR2G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Diode Type:	Schottky - 1 Pair Series Connection
Voltage - Peak Reverse (Max):	30V
Current - Max:	220mA
Capacitance @ Vr, F:	--
Resistance @ If, F:	--
Power Dissipation (Max):	250mW
Operating Temperature:	150°C (TJ)
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	HBAT-5402

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Introduction
The HBAT-5402-TR2G is a series of diodes for radio frequency (RF) applications. It is a low noise high-performance RF diode that provides good stability and directivity. The diode is especially suitable for switching and modulation applications such as jammers, receivers, spectrum analyzers, and transmitters. The diode features high-frequency performance and wide dynamic range, making it ideal for robust wireless applications.

Application Field
The HBAT-5402-TR2G is a high-frequency diode that provides excellent stability and directivity in wireless applications. It can be used in many applications such as jammers, receivers, spectrum analyzers, and transmitters. Furthermore, the diode is suitable for linear amplification and modulation, making it useful for creating radio waves with accurate and reliable frequency modulation. Additionally, the diode can be employed in applications where noise limitation and dynamic range are necessary, such as cell phone base stations and radio networks.

Working Principle
A diode is a two-terminal electronic device that consists of an anode and a cathode. It allows current flow only in one direction and blocks current in the other. In a diode, when a positive voltage is applied at the anode, electrons start to flow from the anode to the cathode, across the junction. This flow of electrons is known as “forward bias.” However, when a negative voltage is applied to the anode, the electrons are pushed back and do not flow. This is known as “reverse bias.”

The HBAT-5402-TR2G is a high-performance RF diode that operates on the principle of forward bias. When a positive voltage is applied to the cathode, current starts to flow in the forward bias direction. This flow of current creates an electric field in the diode and a corresponding magnetic field in the surrounding area. The electric field affects the transmission line, modulating it and allowing for effective modulation of the radio wave. Additionally, the magnetic field created around the diode also contributes to the modulation of the wave, making it ideal for applications such as modulators and jammers. The working principle of this diode makes it suitable for robust wireless applications.

Conclusion
The HBAT-5402-TR2G is a high-performance RF diode designed for radio frequency (RF) applications. It is suitable for a wide range of applications, such as jammers, receivers, spectrum analyzers, and transmitters. The diode operates on the principle of forward bias, in which a positive voltage applied across the cathode creates an electric and magnetic field which modulate the transmission line. Additionally, the diode provides high-frequency performance and wide dynamic range, making it an ideal solution for robust wireless applications.

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