HBAT-540C-TR2G Discrete Semiconductor Products |
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Allicdata Part #: | HBAT-540C-TR2G-ND |
Manufacturer Part#: |
HBAT-540C-TR2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | DIODE SCHOTTKY 30V 430MA SOT-323 |
More Detail: | RF Diode Schottky - 1 Pair Series Connection 30V 4... |
DataSheet: | HBAT-540C-TR2G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Schottky - 1 Pair Series Connection |
Voltage - Peak Reverse (Max): | 30V |
Current - Max: | 430mA |
Capacitance @ Vr, F: | -- |
Resistance @ If, F: | -- |
Power Dissipation (Max): | 825mW |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
Base Part Number: | HBAT-540 |
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The HBAT-540C-TR2G is a small-signal diode with an RF application. It is a dual-gate 150 MHz bipolar junction transistor (BJT) that can handle a wide range of high-frequency signals. The HBAT-540C-TR2G is excellent for high-speed digital data line isolation. It has a wide input voltage range and a low turn-on voltage.
During normal operation, the HBAT-540C-TR2G will take a signal as an input, which will be amplified by the BJT and output as a higher-power signal. This makes the device useful for RF signal isolation and amplification purposes. The HBAT-540C-TR2G features two independent gates for controlling the signal input, making it very flexible and easy to use. The high gain makes it suitable for both high-frequency applications such as communication systems, as well as for a wide range of low-frequency applications such as audio systems.
The operating temperature range of the HBAT-540C-TR2G is -55 to +125°C. The maximum current transfer ratio is 7.5. The maximum power dissipation is around 1/2 watt. The voltage range is 1.5 to 44 volts. The forward bias voltage is 0.5 to 1.5 V.
The HBAT-540C-TR2G provides high level of performance and reliability. Its small size and low power consumption make it ideal for a wide range of applications. It is used in a variety of RF systems, such as wireless neighborhood systems, wireless LANs, and cellular radios. It is also used in audio systems, data line inversion systems, and many other applications.
The HBAT-540C-TR2G can be used for a variety of signal processing tasks. It is excellent for filtering and amplifying signals, such as those used in audio systems. It can also be used for data line isolation, signal noise reduction, and signal distortion compensation. It is also useful for high efficiency signal elimination, for example in signal amplifiers.
The HBAT-540C-TR2G is an ideal device for high performance applications. It is also useful for system integration and tuning. Its high gain and wide bandwidth make it ideal for high-frequency applications. It is also suitable for noise filtering, signal isolation, and other applications that require advanced signal processing.
In conclusion, the HBAT-540C-TR2G is a very versatile and reliable diode for RF applications. It features two independent gates for controlling the signal input, and thus provides great flexibility for RF applications. Its high gain and large dynamic range make it suitable for a wide range of applications, including audio systems, data line inversion systems, wireless LANs, cellular radios, and many other applications.
The specific data is subject to PDF, and the above content is for reference
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