Allicdata Part #: | HER101GR0G-ND |
Manufacturer Part#: |
HER101G R0G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 50V 1A DO204AL |
More Detail: | Diode Standard 50V 1A Through Hole DO-204AL (DO-41... |
DataSheet: | HER101G R0G Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.03726 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 50V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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HER101G is a rectifier diode with a single, apdated junction type. Its maximum reverse region potential is 60V, and its PIV (peak inverse voltage) is 100V. It has a high surge current capability and low forward voltage drop due to its superior doping characteristics.
The HER101G is widely used in rectification circuits where large currents are involved, such as rectification of alternating currents (AC). In power rectification applications it is used where very large current capabilities are necessary, or when very high load currents must be carried at temperatures which may reach up to about 200°C. It is particularly useful for high-temperature application such as high-power lamp ballasts, automotive applciations, and any other application where high power is necessary.
The HER101G can also be used in applications where a very large surge current capability is required. The larger components of the HER101G, including the drain and source conductors, are relatively simple to install and use, which makes it easy to assemble a reliable circuit.
The HER101G also has a high frequency response due to its semiconductor and metal layers. The semiconductor layer is low enough to provide good insulation and the metal layer can be used to shield against interference from noise sources. This allows the HER101G to operate at very high frequencies and makes it well suited for use in complex, high-frequency circuits.
The working principle of the HER101G is relatively simple and is based on diode rectification. Here, a voltage is applied to the diode and the resulting current will be rectified. This rectified current can then be used to power devices, or to store energy in a battery. The HER101G is commonly used as a power regulator, where it is often used to regulate the output current and voltage of a power supply.
Overall, the HER101G is a very useful rectifier diode and is used in many applications where large currents, high voltages, and frequency responses are needed. Its wide range of applications make it a versatile component which can be used in many different circuit designs.
The specific data is subject to PDF, and the above content is for reference
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