HER102G-TP Allicdata Electronics
Allicdata Part #:

HER102G-TP-ND

Manufacturer Part#:

HER102G-TP

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE GEN PURP 100V 1A DO41
More Detail: Diode Standard 100V 1A Through Hole DO-41
DataSheet: HER102G-TP datasheetHER102G-TP Datasheet/PDF
Quantity: 1000
5000 +: $ 0.04763
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C
Description

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The HER102G-TP is a single-phased rectifier diode, which is specifically designed used for high-frequency applications with a wide forward voltage range. It is a versatile device which can be widely used in automotive industries, telecommunications, and other high power applications. The HER102G-TP device is rated with a maximum reverse voltage of 600V and can handle a maximum repetitive peak forward current of 3A.

The HER102G-TP rectifier diode is often used in a variety of different applications, such as power supplies, switching circuits, and rectification. In power supplies, the HER102G-TP is used to switch AC currents on and off for power regulation, allowing for efficient operation. When used in switching circuits, the HER102G-TP is used to provide a control signal to electronic devices when certain conditions are met. Finally, in rectification, the HER102G-TP helps to convert alternating current (AC) into direct current (DC). This helps to provide a steady supply of power for various electrical components.

The HER102G-TP rectifier diode works on a simple principle known as the PN junction. A PN junction consists of two differently-doped materials, called P and N-type materials, which are connected at one end. The P-type material has an excess of holes, while the N-type has an excess of electrons. When the material is exposed to a voltage, the P-type material attracts the electrons in the N-type material, creating a potential barrier across the junction. This potential barrier is known as the “built-in” potential of the diode.

When a voltage is applied across the HER102G-TP’s PN junction, the magnitude of the built-in potential of the diode, known as the “threshold voltage”, is exceeded. Consequently, current begins to flow in one direction, allowing for conduction. This applied voltage is known as the forward bias voltage, as it allows for current to travel in a forward direction, opposed to the reverse-bias of the diode, which prevents current flow. A forward bias voltage is typically applied when the HER102G-TP is used in either a rectifying or switching circuit.

Finally, the HER102G-TP rectifier diode is rated to handle peak repetitive forward currents of up to 3A. This means that the device is able to carry a large amount of current without suffering damage. As such, it is commonly used in high power applications, such as automotive industries, telecommunications, and other fields.

To conclude, the HER102G-TP is a versatile rectifier diode which is specifically designed for high-frequency applications. It works on the simple principle of a PN junction, allowing for current to flow in either a forward bias, or a reverse bias. The HER102G-TP is capable of handling peak forward currents of up to 3A, making it a great choice for high power applications. This makes it suitable for industries such as automotive, telecommunications, and more.

The specific data is subject to PDF, and the above content is for reference

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