HER1001G C0G

HER1001G C0G application field and working principle

Diodes - Rectifiers - Arrays

The HER1001G C0G is a single-phase silicon carbide (SiC) Schottky Rectifier Array. It contains four diodes in a hermetically sealed SOD-323FL package. This array is suitable for a wide range of applications due to its low-reverse leakage current, high-switching speed and low-on state resistance. It is ideal for use in automotive, consumer, industrial and communications applications.

The HER1001G C0G operates with a maximum thermal operating temperature ranging from –55 to + 125 °C, and has a peak reverse voltage of 800 V. The maximum forward voltage drop (VF) of the diodes in the array is 0.86 V at a forward current of 0.5 A. The package of the device is hermetic, allowing it to be used in harsh environments without affecting its performance.

The HER1001G C0G rectifier array consists of four diodes connected in a single phase configuration. The diodes are connected in a parallel configuration, meaning that the current can flow through each one of them, either in the forward or reverse direction. In the forward direction, the diodes allow the current to flow, while in the reverse direction its extremely low leakage current allows it to block the flow of current. The low-on state resistance of the device also makes it an ideal choice for high efficiency applications.

In addition to its low-on state resistance and its extremely low leakage current in the reverse direction, the high switching speed of the HER1001G C0G rectifier array allows it to be used for applications requiring high frequency switching. This makes it a great choice for use in LED lighting, AC/DC converters, display drivers, power factor correction, and other high frequency applications.

The HER1001G C0G rectifier array is ideal for use in automotive, consumer, industrial and communications applications due to its robust package. The device is hermetically sealed, allowing it to be used in harsh environments without sacrificing performance. The low-on state resistance, low reverse leakage and high switching speed also make it an ideal choice for use in high efficiency applications.